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PDF ELM7785-35F Data sheet ( Hoja de datos )
| Número de pieza | ELM7785-35F | |
| Descripción | C-Band Internally Matched FET | |
| Fabricantes | SUMITOMO | |
| Logotipo |  |
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ELM7785-35F
FEATURES
•High Output Power: P1dB=45.5dBm(Typ.)
•High Gain: G1dB=8.0dB(Typ.)
•High PAE: ηadd=35%(Typ.)
•Broad Band: 7.7 to 8.5GHz
•Impedance Matched Zin/Zout = 50ohm
•Hermetically Sealed Package
DESCRIPTION
The ELM7785-35F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50ohm system.
C-Band Internally Matched FET
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C)
Ite m
Symbol
Rating
Drain-Source Voltage
VDS
15
Gate-Source Voltage
V GS
-5
Total Pow er Dissipation
PT
115
Storage Tem perature
Channel Tem perature
Tstg
Tch
-55 to +175
175
Unit
V
V
W
deg.C
deg.C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.C)
Ite m
Sym bol
Condition
Lim it
DC Input Voltage
Forw ard Gate Current
Reverse Gate Current
VDS
IGF RG=10 ohm
IGR RG=10 ohm
≤10
≤108
≥-23.2
Storage Tem perature
Channel Tem perature
Tstg
Tch
-55 to +125
155
Unit
V
mA
mA
deg.C
deg.C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Ite m
Sym bol
Condition
Lim it
Min. Typ. Max.
Unit
Drain Current
Trans conductance
IDSS VDS=5V , VGS=0V
gm VDS=5V , IDS=8.0A
- 16 -
- 16 -
A
S
Pinch-off Voltage
Gate-Source Breakdow n Voltage
Vp
V GSO
VDS=5V , IDS=960mA
IGS=-960uA
-0.5 -1.5 -3.0
-5.0 -
-
V
V
Output Pow er at 1dB G.C.P.
Pow er Gain at 1dB G.C.P.
Drain Current
Pow er-added Efficiency
Gain Flatness
Therm al Resistance
P1dB
G1dB
Idsr
Nadd
∆G
Rth
VDS=10V
f= 7.7 to 8.5 GHz
IDSDC=8.0A (typ.)
Zs=ZL=50 ohm
Channel to Case
45.0 45.5
7.0 8.0
- 8.5
- 35
--
- 1.1
-
-
9.5
-
1.2
1.3
dBm
dB
A
%
dB
deg.C/W
Channel Tem perature Rise
∆Tch
10V x Idsr X Rth
-
- 100
deg.C
CASE STYLE : IK
S.C.L. : Single Carrier Level G.C.P.: Gain Com pression Point
ESD Class 3A 4000V to 8000V
Note : Based on JEDEC JESD22-A114 (C=100pF, R=1500ohm)
RoHS COMPLIANCE
Yes
Edition 1.2
Jul. 2012
1
1 page  
ELM7785-35F
C-Band Internally Matched FET
For further information please contact:
http://global-sei.com/Electro-optic/about/office.html
CAUTION
This product contains gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For
safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as
these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
・Observe government laws and company regulations when discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste procedures.
Edition 1.2
Jul. 2012
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet ELM7785-35F.PDF ] | |
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