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PDF ELM7785-16F Data sheet ( Hoja de datos )

Número de pieza ELM7785-16F
Descripción C-Band Internally Matched FET
Fabricantes SUMITOMO　
Logotipo SUMITOMO Logotipo



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No Preview Available ! ELM7785-16F Hoja de datos, Descripción, Manual

ELM7785-16F
C-band Internally Matched FET
FEATURES
High Output Power : P1dB=42.5dBm(typ.)
High Gain : G1dB=8.0dB(typ.)
High P.A.E. : hadd=37%(typ.)
Broad Band : 7.7 to 8.5GHz
Impedance Matched Zin/Zout = 50ohm
Hermetically Sealed Package
DESCRIPTION
The ELM7785-16F is a power GaAs FET that is internally
matched for standard communication bands to provide
optimum power and gain in a 50ohm system.
SEDI’s stringent Quality Assurance Program assures
the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING
Item
Symbol
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
PT
TST G
TCH
Rating
15
-5
46.9
-65 to +175
+ 175
Unit
V
V
W
deg.C
deg.C
RECOMMENDED OPERATING CONDITIONS
Item
Symbol
DC input Voltage
Forward Gate Current
Reverse Gate Current
Storage Temperature
Channel Temperature
VDS
IGF
IGR
TST G
TCH
Condition
RG=51ohm
RG=51ohm
Recommend
< 10
< +43.0
> -11.0
-55 to +125
+ 155
Unit
V
mA
mA
deg.C
deg.C
ELECTRICAL CHARACTEEISTICS ( Case Temperature Tc=25 deg.C )
Item
Symbol
Test Conditions
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Frequency Range
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current at 1dB G.C.P.
Power Added Efficiency
Gain Flatness
3rd Order Inter Modulation
Distortion
Thermal Resistance
Channel Temperature Rise
IDSS
gm
VP
VGSO
f
P1dB
G1dB
Idsr
hadd
DG
IM3
Rth
DTch
VDS=5V, VGS=0V
VDS=5V, IDS=4200mA
VDS=5V, IDS=300mA
IGS=-300uA
VDS=10V
IDS(DC)=2800mA(typ.)
Zs=Zl=50ohm
f=8.5GHz, Df=10MHz, 2-Tone Test
Pout=31.5dBm ( S.C.L. )
Channel to Case
(VDS x Idsr - POUT + PIN) x Rth
Min.
-
-
-0.5
-5
7.7
41.5
7.0
-
-
-
-40
-
-
Limits
Typ.
7600
5000
-1.5
-
-
42.5
8.0
4000
37
-
Max.
10500
-
-3.0
-
8.5
-
-
4600
-
1.2
-43 -
2.7 3.2
- 100
Unit
mA
mS
V
V
GHz
dBm
dB
mA
%
dB
dBc
deg.C/W
deg.C
G.C.P. = Gain Compression Point
S.C.L. = Single Carrier Level
Note : RF-Test is measured with Vgs-Constant Circuit
ESD
class 3A
@JEDEC JESD22-A114 (C=100pF, R=1500ohm)
CASE STYLE
IK
RoHS Compliance
Yes
Edition 1.1
Mar. 2012
1

1 page




ELM7785-16F pdf
ELM7785-16F
C-band Internally Matched FET
Output Power & P.A.E. v.s. Input Power
by Temperature
VDS(DC)=10V, IDS(DC)[email protected]ｚ
44 120
42 100
40
80
38
60
36
40
34
32 20
30 0
23 25 27 29 31 33 35 37
Input Power[dBm]
Tc = -40 deg.C
Tc = 80 deg.C
Tc = 20 deg.C
Output Power & P.A.E. v.s. Input Power
by Temperature
VDS(DC)=10V, IDS(DC)[email protected]ｚ
44 120
42 100
40 80
38
60
36
40
34
32 20
30 0
23 25 27 29 31 33 35 37
Input Power[dBm]
Tc = -40 deg.C
Tc = 80 deg.C
Tc = 20 deg.C
Output Power & P.A.E. v.s. Input Power
by Temperature
VDS(DC)=10V, IDS(DC)[email protected]ｚ
44 120
42 100
40
80
38
60
36
40
34
32 20
30 0
23 25 27 29 31 33 35 37
Input Power[dBm]
Tc = -40 deg.C
Tc = 80 deg.C
Tc = 20 deg.C
Edition 1.1
Mar. 2012
5

5 Page





ELM7785-16F arduino
ELM7785-16F
C-band Internally Matched FET
For further information please contact:
http://global-sei.com/Electro-optic/about/office.html
CAUTION
This product contains gallium arsenide (GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as
these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
・Observe government laws and company regulations when discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste procedures.
Edition 1.1
Mar. 2012
11

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