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PDF ELM7179-10F Data sheet ( Hoja de datos )

Número de pieza ELM7179-10F
Descripción C-Band Internally Matched FET
Fabricantes SUMITOMO 
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No Preview Available ! ELM7179-10F Hoja de datos, Descripción, Manual

ELM7179-10F
C-band Internally Matched FET
FEATURES
High Output Power P1dB=40.5dBm(typ.)
High Gain G1dB=9.0dB(typ.)
High P.A.E. : ηadd=38%(typ.)
Broad Band 7.1 - 7.9GH
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed Package
DESCRIPTION
The ELM7179-10F is a power GaAs FET that is
internally matched for standard communication bands
to provide optimum power and gain in a 50Ω system.
SEDI’s stringent Quality Assurance Program assures
the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING
Item
Symbol
Drain-Source Voltage
Gata-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
PT
TST G
TCH
Rating
15
-5
42.8
-65 to +175
+ 175
Unit
V
V
W
deg-C
deg-C
RECOMMENDED OPERATING CONDITIONS
Item
Symbol
DC input Voltage
Forward Gate Current
Reverse Gate Current
Storage Temperature
Channel Temperature
VDS
IGF
IGR
TST G
TCH
Condition
RG=51Ω
RG=51Ω
Recommend
< 10
< +27.0
< -5.8
-55 to +125
+ 155
Unit
V
mA
mA
deg-C
deg-C
RECOMMENDED OPERATING CONDITIONS ( Case Temperature Tc=25 deg-C )
Item
Symbol
Test Conditions
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Frequency Range
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current at 1dB G.C.P.
Power Added Efficiency
Gain Flatness
3rd Order Inter Modulation
Distortion
IDSS
gm
VP
VGSO
P1dB
G1dB
Idsr
ηadd
dG
IM3
VDS=5V, VGS=0V
VDS=5V, IDS=2400mA
VDS=5V, IDS=240mA
IGS=-240uA
VDS=10V
IDS(DC)=2600mA(typ.)
Zs=Zl=50Ω
f=7.9GHz, df=10MHz, 2-Tone Test
Pout=29.0dBm ( S.C.L. )
Min.
-0.5
-5
7.1
39.5
8.0
-44
Limits
Typ.
4000
4000
-1.5
40.5
9.0
2600
38
-46
Max.
5600
-3.0
7.9
3000
1.2
Unit
mA
mS
V
V
GH
dBm
dB
mA
dB
dBc
Thermal Resistance
Channel Temperature Rise
Rth
dTch
Channel to Case
(VDS x Idsr - POUT + PIN) x Rth
3.0 3.5 deg-C/W
- - 100 deg-C
G.C.P. = Gain Compres sion Point
S.C.L. = Single Carrier Level
Note : RF-Test is measured with Vgs-Constant Circuit
ESD
class 3A
@JEDEC JESD22-A114C.01 (C=100pF, R=1500Ω)
CASE STYLE
IK
RoHS Compliance
Yes
Edition 1.0
Mar. 2010
1

1 page




ELM7179-10F pdf
ELM7179-10F
C-band Internally Matched FET
Output Power P.A.E. v.s. Input Power
by Temperature
VDS(DC)=10V, IDS(DC)[email protected]
42 120
40 100
38 80
36 60
34 40
32 20
30 0
21 23 25 27 29 31 33 35
Input Power[dBm]
Tc = -40deg-C
Tc = 80deg-C
Tc = 20deg-C
Output Power P.A.E. v.s. Input Power
by Temperature
VDS(DC)=10V, IDS(DC)[email protected]
42 120
40 100
38 80
36 60
34 40
32 20
30 0
21 23 25 27 29 31 33 35
Input Power[dBm]
Tc = -40deg-C
Tc = 80deg-C
Tc = 20deg-C
Output Power P.A.E. v.s. Input Power
by Temperature
VDS(DC)=10V, IDS(DC)[email protected]
42 120
40 100
38 80
36 60
34 40
32 20
30 0
21 23 25 27 29 31 33 35
Input Power[dBm]
Tc = -40deg-C
Tc = 80deg-C
Tc = 20deg-C
Edition 1.0
Mar. 2010
5

5 Page





ELM7179-10F arduino
ELM7179-10F
C-band Internally Matched FET
For further information please contact :
Sumitomo Electric Device Innovations,
U.S.A., Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: +1 408 232-9500
FAX: +1 408 428-9111
Sumitomo Electric Europe Ltd.
220 Centennial Park
Elstree WD6 3SL United Kingdom
TEL: +44 (0)20 8953-8118
FAX: +44 (0)20 8953-8228
Sumitomo Electric Europe Ltd. (Italy Branch)
Piazza Don E. Maoelli, 60 - 20099
Sesto San Giovanni, Milano, Italy
TEL: +39-02-496386-01
FAX: +39-02-496386-25
Sumitomo Electric Asia, Ltd.
Room 2624-2637, 26/F.,
Sun Hung Kai Centre,
30 Harbour Road, Wanchai, Hong Kong
TEL: +852-2576-0080
FAX: +852-2576-6412
CAUTION
Sumitomo Electric Device Innovations, Inc. products contain gallium
arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Sumitomo Electric Device Innovations, Inc. reserves the right to
change products and specifications without notice.The information
does not convey any license under rights of Sumitomo Electric
Device Innovations, Inc. or others.
© 2010 Sumitomo Electric Device Innovations, Inc.
Sumitomo Electric Device Innovations, Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sumitomo Electric Industries, Ltd.
Head Office (Tokyo)
3-9-1, Shibaura, Minato-ku, Tokyo 108-8539,
Japan
TEL +81-3-6722-3283
FAX +81-3-6722-3284
Edition 1.0
Mar. 2010
11

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