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PDF FLM6472-18F Data sheet ( Hoja de datos )
| Número de pieza | FLM6472-18F | |
| Descripción | C-Band Internally Matched FET | |
| Fabricantes | SUMITOMO | |
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FLM6472-18F
FEATURES
C-Band Internally Matched FET
• High Output Power: P1dB = 43.0dBm (Typ.)
• High Gain: G1dB = 9.5dB (Typ.)
• High PAE: ηadd = 37% (Typ.)
• Low IM3 = -46dBc@Po = 32.0dBm
• Broad Band: 6.4 ~ 7.2GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package
DESCRIPTION
The FLM6472-18F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
15 V
-5 V
Total Power Dissipation
PT Tc = 25°C
83.3 W
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 48.0 and -8.4 mA respectively with
gate resistance of 25Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Limit
Typ. Max.
°C
°C
Unit
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 4875mA
-
-
7.5 11.25
7500 -
A
mS
Pinch-off Voltage
Vp VDS = 5V, IDS = 250mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage VGSO IGS = -250µA
Output Power at 1dB G.C.P.
P1dB
-5.0 -
42.0 43.0
-
-
V
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
G1dB
Idsr
ηadd
∆G
VDS =10V,
IDS = 0.65 IDSS (Typ.),
f = 6.4 ~ 7.2 GHz,
ZS=ZL= 50 ohm
8.5 9.5 -
- 4875 6000
- 37 -
- - ±0.6
dB
mA
%
dB
3rd Order Intermodulation
Distortion
Thermal Resistance
f = 7.2 GHz, ∆f = 10 MHz
IM3 2-Tone Test
Pout = 32.0dBm S.C.L.
-44 -46
-
Rth Channel to Case
- 1.6 1.8
dBc
°C/W
Channel Temperature Rise
∆Tch 10V x Idsr x Rth
- - 80
°C
CASE STYLE: IK
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.2
August 2004
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FLM6472-18F.PDF ] | |
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