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Datasheet FLM6472 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1FLM6472-12FC-Band Internally Matched FET

FLM6472-12F FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package C-Band Internally Matched FET
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2FLM6472-12FC-Band Internally Matched FET

FLM6472-12F FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package C-Band Internally Matched FET
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3FLM6472-18FC-Band Internally Matched FET

FLM6472-18F FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package C-Band Internally Matched FET
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4FLM6472-25FC-Band Internally Matched FET

FLM6472-25F FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 38% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package C-Band Internally Matched FET
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5FLM6472-4FC-Band Internally Matched FET

FLM6472-4F FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package C-Band Internally Matched FET D
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FLM Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1FLM0910-12FX-Band Internally Matched FET

FLM0910-12F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broad Band: 9.5~10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-12F is a power GaAs FET that
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2FLM0910-12FX-Band Internally Matched FET

FLM0910-12F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broad Band: 9.5~10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-12F is a power GaAs FET that
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3FLM0910-15FX-Band Internally Matched FET

FLM0910-15F X-Band Internally Matched FET FEATURES •E High Output Power: P1dB=42.0dBm(Typ.) •E High Gain: G1dB=7.5dB(Typ.) •E High PAE: ηadd=32%(Typ.) •E Broad Band: 9.5~10.5GHz •E Impedance Matched Zin/Zout = 50Ω Hermetically Ε Sealed Package DESCRIPTION The FLM0910-15F is a power GaA
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4FLM0910-25FX-Band Internally Matched FET

FLM0910-25F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5~10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-25F is a power GaAs FET that
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5FLM0910-3FX / Ku-Band Internally Matched FET

FLM0910-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 35.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FLM0910-3F is
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6FLM0910-4FX / Ku-Band Internally Matched FET

FLM0910-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FLM0910-4F is
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7FLM0910-8FX / Ku-Band Internally Matched FET

FLM0910-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FLM0910-8F is
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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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