|
|
PDF FLM5964-18F Data sheet ( Hoja de datos )
| Número de pieza | FLM5964-18F | |
| Descripción | C-Band Internally Matched FET | |
| Fabricantes | SUMITOMO | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FLM5964-18F (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
FLM5964-18F
FEATURES
C-Band Internally Matched FET
• High Output Power: P1dB = 43.0dBm (Typ.)
• High Gain: G1dB = 10.0dB (Typ.)
• High PAE: ηadd = 37% (Typ.)
• Low IM3 = -46dBc@Po = 32.0dBm
• Broad Band: 5.9 ~ 6.4GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package
DESCRIPTION
The FLM5964-18F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15 V
Gate-Source Voltage
VGS
-5 V
Total Power Dissipation
PT Tc = 25°C
83.3 W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175 °C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 48.0 and -8.4 mA respectively with
gate resistance of 25Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Unit
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 7.5 11.25
A
Transconductance
gm VDS = 5V, IDS = 4875mA - 7500 -
mS
Pinch-off Voltage
Vp VDS = 5V, IDS = 250mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage VGSO IGS = -250µA
Output Power at 1dB G.C.P.
P1dB
-5.0 -
42.0 43.0
-
-
V
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
G1dB
Idsr
ηadd
VDS =10V,
IDS = 0.65IDSS (Typ.),
f = 5.9 ~ 6.4 GHz,
ZS=ZL= 50 ohm
9.0 10.0 -
- 4875 6000
- 37 -
dB
mA
%
Gain Flatness
∆G
- - ±0.6
dB
3rd Order Intermodulation
Distortion
f = 6.4 GHz, ∆f = 10 MHz
IM3 2-Tone Test
Pout = 32.0dBm S.C.L.
-44 -46
-
dBc
Thermal Resistance
Rth Channel to Case
- 1.6 1.8
°C/W
Channel Temperature Rise
∆Tch 10V x Idsr x Rth
- - 80
°C
CASE STYLE: IK
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.2
August 2004
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FLM5964-18F.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FLM5964-18DA | Internally Matched Power GaAs FETs |  Fujitsu |
| FLM5964-18F | C-Band Internally Matched FET | Fujitsu |
| FLM5964-18F | C-Band Internally Matched FET |  Eudyna Devices |
| FLM5964-18F | C-Band Internally Matched FET | SUMITOMO |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |