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PDF FLM2023L-30F Data sheet ( Hoja de datos )

Número de pieza FLM2023L-30F
Descripción L-Band Internally Matched FET
Fabricantes SUMITOMO 
Logotipo SUMITOMO Logotipo



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FLM2023L-30F
L-Band Internally Matched FET
FEATURES
High Output Power: P1dB=45.0dBm(Typ.)
High Gain: G1dB=13.0dB(Typ.)
High PAE: hadd=43%(Typ.)
Broad Band: 2.025 to 2.285GHz
Impedance Matched Zin/Zout = 50ohm
Hermetically Sealed Package
DESCRIPTION
The FLM2023L-30F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50ohm system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C)
Item
Symbol
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
PT
Tstg
Tch
Rating
15
-5
107
-65 to +175
175
Unit
V
V
W
deg.C
deg.C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.C)
Item
Symbol
Condition
DC Input Voltage
VDS
Forward Gate Current
IGF RG=25ohm
Reverse Gate Current
IGR RG=25ohm
Limit
<= 10
<= 54
>=-17.2
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Item
Symbol
Condition
Drain Current
Trans conductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
3rd Order Intermodulation Distortion
Thermal Resistance
Channel Temperature Rise
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
hadd
DG
IM3
Rth
DTch
VDS=5V, VGS=0V
VDS=5V, IDS=7.2A
VDS=5V, IDS=720mA
IGS=-720uA
VDS=10V
IDSDC=7.0A
f=2.025 to 2.285 GHz
Zs=ZL=50ohm
f=2.285 GHz
Df=5MHz, 2-Tone Test
Pout=34.5dBm (S.C.L.)
Channel to Case
10V x Idsr x Rth
Min.
-
-
-1.0
-5.0
44.0
12.0
-
-
-
Limit
Typ.
-
6000
-2.0
-
45.0
13.0
7.0
43
-
Max.
16
-
-3.5
-
-
-
8.5
-
2.0
Unit
A
mS
V
V
dBm
dB
A
%
dB
-44 - - dBc
- 1.2 1.4 deg.C/W
- - 100 deg.C
G.C.P.: Gain Compression Point
CASE STYLE
IK
ESD
Class 3A
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kohm)
4000V to 8000V
RoHS Compliance
Yes
Edition 1.2
Aug. 2012
1

1 page




FLM2023L-30F pdf
FLM2023L-30F
L-Band Internally Matched FET
For further information please contact:
http://global-sei.com/Electro-optic/about/office.html
CAUTION
This product contains gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For
safety, observe the following procedures:
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as
these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste procedures.
Edition 1.2
Aug. 2012
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