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PDF IRGS4086PbF Data sheet ( Hoja de datos )
| Número de pieza | IRGS4086PbF | |
| Descripción | PDP Trench IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PDP TRENCH IGBT
PD - 96222
IRGB4086PbF
IRGS4086PbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for Improved Panel Efficiency
l High Repetitive Peak Current Capability
l Lead Free Package
Key Parameters
VCE min
cVCE(ON) typ. @ IC = 70A
IRP max @ TC= 25°C
TJ max
300
1.90
250
150
C
V
V
A
°C
G
CE
G
CE
G
E
n-channel
TO-220AB
D2Pak
IRGB4086PbF IRGS4086PbF
GC
E
G ate
C ollector
Em itter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθCS
RθJA
Parameter
dThermal Resistance Junction-to-Case-(each IGBT)
Case-to-Sink (flat, greased surface)
dfJunction-to-Ambient (typical socket mount)
Weight
Max.
±30
70
40
250
160
63
1.3
-40 to + 150
300
x x10lb in (1.1N m)
Typ.
–––
0.24
–––
6.0 (0.21)
Max.
0.8
–––
40
–––
Units
V
A
W
W/°C
°C
N
Units
°C/W
g (oz)
www.irf.com
1
02/02/09
1 page  
10000
1000
Cies
IRGB/S4086PbF
25
ID= 25A
20
15
VDS= 240V
VDS= 200V
VDS= 150V
100
Coes
Cres
10
0
100 200
VCE (V)
300
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
1
10
5
0
0 20 40 60 80 100
QG Total Gate Charge (nC)
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
τJ τJ
τ1 τ1
R1R 1
CiC= iτ=i/τRi/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W) τι (sec)
τCτ 0.084697 0.000038
τ3τ3 0.374206 0.001255
0.341867 0.013676
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT)
www.irf.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRGS4086PbF.PDF ] | |
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