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PDF IRG4BC20KD-SPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG4BC20KD-SPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD -95677
IRG4BC20KD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT
RECOVERY DIODE
Features
Short Circuit Rated UltraFast: Optimized for
C
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
G
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard D2Pak package
E
n-channel
Lead-Free
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.27V
@VGE = 15V, IC = 9.0A
Benefits
Latest generation 4 IGBT's offer highest power
density motor controls possible.
HEXFREDTM diodes optimized for performance
with IGBTs. Minimized recovery characteristics
reduce noise, EMI and switching losses.
This part replaces the IRGBC20KD2-S and
IRGBC20MD2-S products.
For hints see design tip 97003.
Absolute Maximum Ratings
D 2 Pak
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
Max.
600
16
9.0
32
32
7.0
32
10
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Units
V
A
µs
V
W
°C
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient ( PCB Mounted,steady-state)
Weight
Typ.
0.5
1.44
Max.
2.1
2.5
40
Units
°C/W
g
8/11/04
1 page  
800
VCCCGiroeeesEss
=
=
=
=
0V,
CCCggceec
+
+
f = 1MHz
Cgc , Cce
Cgc
SHORTED
600
Cies
400
200
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.8 VCC = 480V
VGE
TJ
=
=
15V
25 °
C
IC = 9.0A
0.7
0.6
IRG4BC20KD-SPbF
20 VCC = 400V
I C = 9.0A
16
12
8
4
0
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10 RG 5=0OΩhm
VGE = 15V
VCC = 480V
IC = 18A
1 IC = 9.09AA
IC = 4.5A
0.5
0
10 20 30 40
RRGG ,, GGaattee RReessisistatannccee( (ΩO)hm)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4BC20KD-SPBF.PDF ] | |
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