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PDF IRGBC20SD2 Data sheet ( Hoja de datos )
| Número de pieza | IRGBC20SD2 | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD-9.1544
IRGBC20SD2
PROVISIONAL
INSULATED GATE BIPOLAR TRANSISTOR WITH Standard Speed CoPack
ULTRAFAST SOFT RECOVERY DIODE
C
Features
VCES = 600V
• Switching-loss rating includes all 'tail' losses
• HEXFREDTM soft ultrafast diodes
• Optimized for line frequency operation (to 400HZ)
Description
Co-packaged IGBTs are a natural extension of
International Rectifier's well-known IGBT line. They
provide the convenience of an IBGT and an ultrafast
recovery diode in one package, resulting in
substantial benefits to a host of high-voltage, high-
current, motor control, UPS and power supply
applications.
G
E
n -ch a n n e l
VCE(SAT) ≤ 2.4V
@VGE = 15V, IC = 10A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
TO-220AB
Max.
600
19
10
76
38
7.0
32
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Min.
------
------
------
-----
------
Typ.
------
------
0.50
-----
2 (0.07)
Max.
2.1
3.5
------
80
------
Units
°C/W
g (oz)
Revision 0:9/04/96
1 page  
IRGBC20SD2
4000
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTE D
C res = C gc
C oes = C ce + C gc
3 0 0 0 C ie s
2000
C oes
1000 Cre s
0A
1 10 100
VCE, Collecto r-to-Em itte r Volta ge (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 40 0V
IC = 20A
16
12
8
4
0A
0 20 40 60 80 100 120
Qg , Total Gate Cha rge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.8
VCC = 480V
VGE = 15V
T C = 25°C
I C = 20A
1.6
1.4
1.2
1.0
0
A
10 20 30 40 50 60
R G , Gate Resistance ( Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
10
RG = 10 Ω
V GE = 15V
V CC = 480V
1
I C = 40A
IC = 20A
IC = 10A
0.1 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRGBC20SD2.PDF ] | |
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