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STGW45HF60WD
Features
■ Improved Eoff at elevated temperature
■ Low CRES / CIES ratio (no cross-conduction
susceptibility)
■ Ultra fast soft recovery antiparallel diode
Applications
■ Welding
■ High frequency converters
■ Power factor correction
Description
The "HF" series is based on a new planar
technology concept to yield an IGBT with tighter
variation of switching energy (Eoff) versus
temperature. Suffix "W" denotes a subset of
products tailored to high switching frequency
operation over 100 kHz.
45 A, 600 V ultra fast IGBT
Preliminary data
TO-247
3
2
1
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STGW45HF60WD
GW45HF60WD
Package
TO-247
Packaging
Tube
August 2009
Doc ID 15593 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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www.st.com
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STGW45HF60WD
3 Test circuits
Figure 2. Test circuit for inductive load
switching
Test circuits
Figure 3. Gate charge test circuit
Figure 4. Switching waveform
AM01504v1
AM01505v1
Figure 5. Diode recovery time waveform
VCE
VG
IC
Td(on)
Tr(Ion)
Ton
90%
10%
Tr(Voff)
Tcross
Td(off)
Toff
Tf
90%
10%
90%
10%
di/dt
IF
IRRM
AM01506v1
trr
ta
tb
Qrr
IRRM
t
di/dt
VF
AM01507v1
Doc ID 15593 Rev 2
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