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PDF FCB36N60N Data sheet ( Hoja de datos )

Número de pieza FCB36N60N
Descripción N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FCB36N60N Hoja de datos, Descripción, Manual

March 2013
FCB36N60N
N-Channel SupreMOS® MOSFET
600 V, 36 A, 90 mΩ
Features
• RDS(on) = 81 mΩ (Typ.)@ VGS = 10 V, ID = 18 A
• Ultra low gate charge (Typ. Qg = 86 nC)
• Low effective output capacitance (Typ. Coss.eff = 361 pF)
• 100% avalanche tested
• RoHS compliant
Applications
• Solar Inverter
• AC-DC Power Supply
D
Description
The SupreMOS® MOSFET is Fairchild Semiconductor®’s next-
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiate it from
the conventional MOSFETs. This advanced technology and pre-
cise process control provide lowest Rsp on-resistance, superior
switching performance and ruggedness. SupreMOS MOSFET is
suitable for high frequency switching power converter applica-
tions such as PFC, server/telecom power, FPD TV power, ATX
power and industrial power applications.
D
GS
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
RθJA*
Thermal Resistance, Junction to Ambient *
RθJA
Thermal Resistance, Junction to Ambient
*When mounted on the minmium pad size recommended (PCB Mount)
G
(Note 1)
(Note 2)
(Note 3)
©2010 Fairchild Semiconductor Corporation
FCB36N60N Rev. C0
1
S
FCB36N60N
600
±30
36
22.7
108
1800
12
3.12
100
20
312
2.6
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/oC
oC
oC
FCB36N60N
0.4
40
62.5
Unit
oC/W
www.fairchildsemi.com

1 page




FCB36N60N pdf
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FCB36N60N Rev. C0
5
www.fairchildsemi.com

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