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PDF NDT01N60T1G Data sheet ( Hoja de datos )

Número de pieza NDT01N60T1G
Descripción N-Channel Power MOSFET / Transistor
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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NDD01N60, NDT01N60
N-Channel Power MOSFET
600 V, 8.5 W
Features
100% Avalanche Tested
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD NDT Unit
DraintoSource Voltage
CStoenatdinyuSoutasteD, rTaCin=C2u5rr°eCnt(NRoqtJeC 1)
Continuous Drain Current
Steady State, TC = 100°C
R(NqoJCte
1)
Pulsed Drain Current, tp = 10 ms
PStoewaedryDSitsastiep,aTtiCon=–2R5°qCJC
GatetoSource Voltage
Single Pulse DraintoSource
Avalanche Energy (IPK = 1.0 A)
Peak Diode Recovery (Note 2)
VDSS
ID
ID
IDM
PD
VGS
EAS
dv/dt
600
1.5 0.4
V
A
1.0 0.25 A
6.0 1.5
A
46 2.5 W
±30 V
13 mJ
4.5 V/ns
Source Current (Body Diode)
Lead Temperature for Soldering
Leads
IS
1.5 0.4
A
TL 260 °C
Operating Junction and Storage
Temperature
TJ, TSTG 55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. IS = 1.5 A, di/dt 100 A/ms, VDD BVDSS
THERMAL RESISTANCE
Parameter
Symbol Value Unit
JunctiontoCase (Drain)
NDD01N60
JunctiontoAmbient
(Note 4) NDD01N60
(Note 3) NDD01N601
(Note 4) NDT01N60
(Note 5) NDT01N60
RqJC
RqJA
2.7 °C/W
38 °C/W
96
58
141
3. Insertion mounted.
4. Surfacemounted on FR4 board using 1” sq. pad size
(Cu area = 1.127” sq. [2 oz] including traces).
5. Surfacemounted on FR4 board using minimum recommended pad size
(Cu area = 0.026” sq. [2 oz]).
© Semiconductor Components Industries, LLC, 2013
January, 2013 Rev. 2
1
http://onsemi.com
V(BR)DSS
600 V
RDS(ON) MAX
8.5 W @ 10 V
NChannel MOSFET
D (2)
G (1)
S (3)
12
3
MARKING
DIAGRAMS
4
Drain
4 DPAK
CASE 369C
STYLE 2
2
1 Drain 3
Gate Source
4
IPAK
CASE 369D
STYLE 2
4
Drain
1 23
Y = Year
WW = Work Week
G = PbFree Package
1 23
Gate Drain Source
1 23
A
Y
W
01N60
Drain
4 SOT223
4
CASE 318E
STYLE 3
= Assembly Location
= Year
= Work Week
= Specific Device Code
AYW
01N60G
G
12 3
Gate Drain Source
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NDD01N60/D

1 page




NDT01N60T1G pdf
NDD01N60, NDT01N60
TYPICAL CHARACTERISTICS
10
50% Duty Cycle
1 20%
10%
5%
2%
0.1
1%
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 13. Thermal Impedance (JunctiontoCase) for NDD01N60
100
50% Duty Cycle
20%
10 10%
5%
2%
1 1%
100 1000
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10 100 1000
PULSE TIME (sec)
Figure 14. Thermal Impedance (JunctiontoAmbient) for NDT01N60
http://onsemi.com
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