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PDF FJP1943 Data sheet ( Hoja de datos )
| Número de pieza | FJP1943 | |
| Descripción | PNP Epitaxial Silicon Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FJP1943
PNP Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier
Features
• High Current Capability: IC = -15A.
• High Power Dissipation : 80watts.
• High Frequency : 30MHz.
• High Voltage : VCEO= -230V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to FJP5200
• Full thermal and electrical Spice models are available.
• Same transistor is also available in:
-- TO264 package, 2SA1943/FJL4215 : 150 watts
-- TO3P package, 2SA1962/FJA4213 : 130 watts
-- TO220F package, FJPF1943 : 50 watts
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
BVCBO
BVCEO
BVEBO
IC
IB
PD
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation(TC=25°C)
Derate above 25°C
TJ, TSTG
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
* Device mounted on minimum pad size
hFE Classification
Classification
hFE1
R
55 ~ 110
November 2008
1
1.Base
TO-220
2.Collector 3.Emitter
Ratings
-230
-230
-5
-15
-1.5
80
0.64
- 50 ~ +150
Units
V
V
V
A
A
W
W/°C
°C
Ratings
1.25
Units
°C/W
O
80 ~ 160
© 2008 Fairchild Semiconductor Corporation
FJP1943 Rev. B
1
www.fairchildsemi.com
1 page  
Mechanical Dimensions
TO220
© 2008 Fairchild Semiconductor Corporation
FJP1943 Rev. B
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FJP1943.PDF ] | |
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