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PDF IRFI4321PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFI4321PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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PD - 97104
IRFI4321PbF
Applications
l Motion Control Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l Hard Switched and High Frequency Circuits
Benefits
l Low RDSON Reduces Losses
l Low Gate Charge Improves the Switching
Performance
l Improved Diode Recovery Improves Switching &
EMI Performance
l 30V Gate Voltage Rating Improves Robustness
l Fully Characterized Avalanche SOA
VDSS
RDS(on)
ID
typ.
max.
D
G
S
HEXFET® Power MOSFET
150V
12.2m:
16m:
34A
D
S
D
G
TO-220AB Full-Pak
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS (Thermally limited)
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy d
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case f
Junction-to-Ambient f
Max.
34
21
140
46
0.37
±30
170
-55 to + 150
300
10lbxin (1.1Nxm)
Typ.
–––
–––
Max.
2.73
65
Units
A
W
W/°C
V
mJ
°C
Units
°C/W
www.irf.com
1
6/23/06
1 page  
IRFI4321PbF
10
1 D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
τJ τJ
τ1 τ1
R1R1
CiC= iτ=i/τRi/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W) τι (sec)
τCτ 0.312941 0.000381
τ3τ3 1.187255 0.219458
1.231176 2.895
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1 1 10
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
10
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
0.05
1 0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
0.1 Tstart = 150°C.
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1
10
180
TOP
Single Pulse
160 BOTTOM 1% Duty Cycle
140 ID = 20A
120
100
80
60
40
20
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
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5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFI4321PBF.PDF ] | |
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