DataSheet.es    


PDF K4110 Data sheet ( Hoja de datos )

Número de pieza K4110
Descripción MOSFET ( Transistor ) - 2SK4110
Fabricantes Toshiba 
Logotipo Toshiba Logotipo

K4110 image


1. MOSFET - Transistor, Equivalent (2SK4110)






Hay una vista previa y un enlace de descarga de K4110 (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! K4110 Hoja de datos, Descripción, Manual

2SK4110
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4110
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.9 (typ.)
High forward transfer admittance: |Yfs| = 5.0 S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 600 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
600
±30
6
24
40
345
6
4
150
-55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 16.8 mH, IAR = 6 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2009-09-29

1 page




K4110 pdf
2SK4110
SAFE OPERATING AREA
100
ID max (PULSED) *
10 ID max (CONTINUOUS) *
100 μs *
DC OPERATION
1 Tc = 25°C
1 ms *
SINGLE NONREPETITIVE
0.1 PULSE
Tc=25
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
0.01
1 10
VDSS max
100
1000
DRAIN-SOURCE VOLTAGE VDS (V)
EAS – Tch
500
400
300
200
100
0
25 50
75 100 125 150
CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
15 V
15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVE FORM
RG = 25 Ω
VDD = 90 V, L = 16.8mH
ΕAS
=
1
2
L
I2
⎜⎜⎝⎛
BVDSS
BVDSS VDD
⎟⎟⎠⎞
5 2009-09-29

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet K4110.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
K4110MOSFET ( Transistor ) - 2SK4110Toshiba
Toshiba
K4111MOSFET ( Transistor ) - 2SK4111Toshiba
Toshiba
K4112Field Effect TransistorToshiba
Toshiba
K4113Field Effect Transistor Silicon N Channel MOS TypeToshiba
Toshiba

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar