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PDF K1529 Data sheet ( Hoja de datos )
| Número de pieza | K1529 | |
| Descripción | MOSFET ( Transistor ) - 2SK1529 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1529
2SK1529
High Power Amplifier Application
l High breakdown voltage
l High forward transfer admittance
l Complementary to 2SJ200
: VDSS = 180V
: |Yfs| = 4.0 S (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Gate−source voltage
Drain current
(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
PD
Tc
Tstg
Rating
180
±20
10
120
150
−55~150
Unit
V
V
A
W
°C
°C
Marking
K1529
※
Type ※ Lot Number
Month (starting from alphabet A)
Year (last number of
the christian era)
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Drain cut−off current
Gate leakage current
Drain−source breakdown voltage
Drain−source saturation voltage
Gate−source cut−off voltage (Note 2)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
IDSS
IGSS
V (BR) DSS
VDS (ON)
VGS (OFF)
|Yfs|
Ciss
Coss
Crss
VDS = 180 V, VGS = 0
VDS = 0, VGS = ±20 V
ID = 10 mA, VGS = 0
ID = 6 A, VGS = 10 V
VDS = 10 V, ID = 0.1 A
VDS = 10 V, ID = 3 A
VDS = 30 V, VGS = 0, f = 1 MHz
VDS = 30 V, VGS = 0, f = 1 MHz
VDD ≈ 30 V, VGS = 0, f = 1 MHz
— — 1.0 mA
— — ±0.5 µA
180 —
—
V
— 2.5 5.0 V
0.8 — 2.8 V
— 4.0 —
S
— 700 —
— 150 —
pF
— 90 —
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VGS (OFF) Classification
0: 0.8~1.6 Y: 1.4~2.8
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-09-02
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet K1529.PDF ] | |
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