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Número de pieza | FDP5N50U | |
Descripción | N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDP5N50U (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! FDP5N50U / FDPF5N50UT
N-Channel MOSFET, FRFET
500V, 4A, 2.0
Features
• RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2A
• Low gate charge ( Typ. 11nC)
• Low Crss ( Typ. 5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
November2009
Ultra FRFETTM
tm
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DOMS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutationmode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor cor-
rection.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
(potted)
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP5N50U FDPF5N50UT
500
±30
4 4*
2.4 2.4*
16 16*
216
4
8.5
4.5
85 28
0.67 0.22
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP5N50U
1.4
0.5
62.5
FDPF5N50UT
4.5
-
62.5
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FDP5N50U / FDPF5N50UT Rev. A-1
1
www.fairchildsemi.com
1 page Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDPF5N50UT
10
0.5
1 0.2
0.1
0.05
0.1 0.02
0.01
0.01 Single pulse
0.003
10-5
10-4
PDM
t1
t2
*Notes:
1. ZJC(t) = 4.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
10-3
10-2
10-1
100
101
102
103
Rectangular Pulse Duration [sec]
FDP5N50U / FDPF5N50UT Rev. A-1
5
www.fairchildsemi.com
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet FDP5N50U.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDP5N50 | N-Channel MOSFET | Fairchild Semiconductor |
FDP5N50F | N-Channel MOSFET | Fairchild Semiconductor |
FDP5N50NZ | N-Channel MOSFET | Fairchild Semiconductor |
FDP5N50U | N-Channel MOSFET | Fairchild Semiconductor |
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