(PDF) TM2314FN Datasheet - N-Channel High Density Trench MOSFET

Número de pieza	TM2314FN
Descripción	N-Channel High Density Trench MOSFET
Fabricantes	TECH MOS
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No Preview Available ! TECH MOS Technology. N-Channel High Density Trench MOSFET TM2314FN PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 5.4 30 @ VGS = 4.5V 20V 4.3 46 @ VGS = 2.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. SOT-23-3L D S G D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousa @ TA = 25 °C -Pulse b Drain-Source Diode Forward Currenta Maximum Power Dissipationa TA=25°C TA=75°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 20 ± 12 5.4 21.5 1.7 1.25 0.75 - 55 to 150 Unit V V A A A W °C THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambienta ：Note a. Surface Mounted on FR4 Board , t ≤ 10sec . b. Pulse width limited by maximum junction temperature. DS-TM2314FN-01 Apr. , 2006 RthJA 1 100 °C/W 1 page

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PDF TM2314FN Data sheet ( Hoja de datos )