|
|
Número de pieza | IPP200N15N3G | |
Descripción | Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPP200N15N3G (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
OptiMOS™3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
Product Summary
V DS
R DS(on),max
ID
150 V
20 mΩ
50 A
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21 *
Type
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G
IPP200N15N3 G
Package
Marking
PG-TO263-3
200N15N
PG-TO252-3
200N15N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
PG-TO262-3
200N15N
PG-TO220-3
200N15N
Value
Unit
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
ID
I D,pulse
E AS
T C=25 °C
T C=100 °C
T C=25 °C
I D=50 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=120 V,
di /dt =100 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
* Except D-PAK ( TO-252 )
Rev. 2.05
page 1
50
40
200
170
6
±20
150
-55 ... 175
55/175/56
A
mJ
kV/µs
V
W
°C
2010-04-28
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
100
10 V
7V
80 8 V
6.5 V
60 6 V
40
5.5 V
20
5V
4.5 V
0
01234
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
100
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
40
35 5 V
5.5 V
6V
30
25
20
8V
15 10 V
10
5
0
5 0 20 40
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
60
80
100
80 80
60 60
40 40
20
0
0
Rev. 2.05
175 °C
25 °C
246
V GS [V]
20
0
80
page 5
40 80 120
I D [A]
160
2010-04-28
5 Page PG-TO220-3 Outline
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
Rev. 2.05
page 11
2010-04-28
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet IPP200N15N3G.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPP200N15N3G | Power-Transistor | Infineon Technologies |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |