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PDF IPI200N25N3G Data sheet ( Hoja de datos )
| Número de pieza | IPI200N25N3G | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
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IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
250 V
20 mW
64 A
Type
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G
Package
Marking
PG-TO263-3
200N25N
PG-TO220-3
200N25N
PG-TO262-3
200N25N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
ID
I D,pulse
E AS
T C=25 °C
T C=100 °C
T C=25 °C
I D=47 A, R GS=25 W
Reverse diode dv /dt
dv /dt
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
64
46
256
320
10
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.4
page 1
2011-07-14
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
150
10 V
125
7V
5V
100
75
50 4.5 V
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
30
25 4.5 V
5V
20 7 V
10 V
15
10
25 5
0
0123
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
140
4
120
100
80
60
40
20
0
0
Rev. 2.4
175 °C
25 °C
246
VGS [V]
0
5 0 20 40 60 80 100 120 140
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
180
160
140
120
100
80
60
40
20
0
80
page 5
25 50 75 100 125
ID [A]
2011-07-14
5 Page 
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.4
page 11
2011-07-14
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IPI200N25N3G.PDF ] | |
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