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PDF IRF2805 Data sheet ( Hoja de datos )
| Número de pieza | IRF2805 | |
| Descripción | AUTOMOTIVE MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF2805 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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PD - 94428
AUTOMOTIVE MOSFET
IRF2805
HEXFET® Power MOSFET
Typical Applications
l Climate Control, ABS, Electronic Braking,
Windshield Wipers
D
VDSS = 55V
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
RDS(on) = 4.7mΩ
S ID = 75A
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (6 sigma)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon limited)
Continuous Drain Current, VGS @ 10V (See Fig.9)
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
175
120
75
700
330
2.2
± 20
450
1220
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
1.1 (10)
Thermal Resistance
Parameter
Typ.
RθJC
Junction-to-Case
–––
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
RθJA
Junction-to-Ambient
–––
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
Max.
0.45
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
°C
N•m (lbf•in)
Units
°C/W
1
8/8/02
1 page  
180
LIMITED BY PACKAGE
150
120
90
60
30
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF2805
3.0
ID = 175A
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature
( ° C)
Fig 10. Normalized On-Resistance
Vs. Temperature
1
D = 0.50
0.1 0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF2805.PDF ] | |
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