(PDF) WNM2023 Datasheet - N-Channel MOSFET

Número de pieza	WNM2023
Descripción	N-Channel MOSFET
Fabricantes	TY Semiconductor
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No Preview Available ! VDS (V) 20 Rds(on) (Ω) 0.038@ VGS=4.5V 0.044@ VGS=2.5V 0.052@ VGS=1.8V Descriptions The WNM2023 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2023 is Pb-free. Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-3L Applications Product specification WNM2023 Single N-Channel, 20V, 3.2A, Power MOSFET SOT-23-3L D 3 12 GS Pin configuration (Top view) 3 W04* 12 W04= Device Code * = Month (A~Z) Marking Order information z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging Device Package Shipping WNM2023-3/TR SOT-23-3L 3000/Reel&Tape http://www.twtysemi.com [email protected] 1 of 3 1 page

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PDF WNM2023 Data sheet ( Hoja de datos )