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PDF FCPF380N60 Data sheet ( Hoja de datos )

Número de pieza FCPF380N60
Descripción N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FCPF380N60 Hoja de datos, Descripción, Manual

March 2013
FCP380N60 / FCPF380N60
N-Channel SuperFET® II MOSFET
600 V, 10.2 A, 380 mΩ
Features
• 650 V @TJ = 150°C
• Max. RDS(on) = 380 mΩ
• Ultra low gate charge (typ. Qg = 30 nC)
• Low effective output capacitance (typ. Coss.eff = 95 pF)
• 100% avalanche tested
Applications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET®II MOSFET is Fairchild Semiconductor®’s first gen-
eration of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-resis-
tance and lower gate charge performance.This advanced tech-
nology is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFETII MOSFET is
suitable for various AC/DC power conversion for system minia-
turization and higher efficiency.
D
GDS
TO-220
GD S
TO-220F
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted
S
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-DC
-AC
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
FCP380N60 FCPF380N60
600
±20
(f >1 HZ)
±30
10.2 10.2*
6.4 6.4*
(Note 1) 30.6
30.6*
(Note 2)
211.6
(Note 1)
2.3
(Note 1)
1.06
(Note 3)
20
100
106 31
0.85 0.25
-55 to +150
300
Thermal Characteristics
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
FCP380N60 FCPF380N60
1.18 4
0.5 0.5
62.5 62.5
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C5
1
www.fairchildsemi.com

1 page




FCPF380N60 pdf
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve - FCP380N60
2
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 1.18oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
Rectangular Pulse Duration [sec]
10-1
100
Figure 14. Transient Thermal Response Curve - FCPF380N60
5
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
1
Rectangular Pulse Duration [sec]
10 100
©2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C5
5
www.fairchildsemi.com

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