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PDF S-19106 Data sheet ( Hoja de datos )
| Número de pieza | S-19106 | |
| Descripción | OPERATION BUILT-IN DELAY CIRCUIT VOLTAGE DETECTOR | |
| Fabricantes | Seiko | |
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Hay una vista previa y un enlace de descarga de S-19106 (archivo pdf) en la parte inferior de esta página. Total 39 Páginas | ||
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S-19104/19106 Series
www.sii-ic.com
© Seiko Instruments Inc., 2014
FOR AUTOMOTIVE 105°C OPERATION BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)
VOLTAGE DETECTOR WITH SENSE PIN
Rev.1.0_00
The S-19104/19106 Series is a high-accuracy voltage detector developed using CMOS technology. The detection voltage
is fixed internally with an accuracy of ±3.5% (−VDET(S) ≥ 2.2 V). It operates with current consumption of 500 nA typ.
Apart from the power supply pin, the detection voltage input pin (SENSE pin) is also prepared, so the output is stable even
if the SENSE pin falls to 0 V.
The release signal can be delayed by setting a capacitor externally, and the release delay time accuracy is ±34% (CD =
4.7 nF, Ta = −40°C to +105°C).
Two output forms Nch open-drain output and CMOS output are available.
Caution This product can be used in vehicle equipment and in-vehicle equipment. Before using the product in
the purpose, contact to SII is indispensable.
Features
• Detection voltage:
1.2 V to 5.0 V (0.1 V step)
• Detection voltage accuracy:
±3.5% (2.2 V ≤ −VDET(S) ≤ 5.0 V, Ta = −40°C to +105°C)
±(2.5% + 22 mV) (1.2 V ≤ −VDET(S) < 2.2 V, Ta = −40°C to +105°C)
• Current consumption:
500 nA typ.
• Operation voltage range:
0.95 V to 10.0 V
• Hysteresis width:
5% ± 2% (Ta = −40°C to +105°C)
• Release delay time accuracy: ±34% (CD = 4.7 nF, Ta = −40°C to +105°C)
• Output form:
Nch open-drain output (Active "L")
CMOS output (Active "L")
• Operation temperature range: Ta = −40°C to +105°C
• Lead-free (Sn 100%), halogen-free
• AEC-Q100 in process*1
*1. Contact our sales office for details.
Applications
• For automotive use (accessory, car navigation system, car audio system, etc.)
Package
• SOT-23-5
Seiko Instruments Inc.
1
1 page  
FOR AUTOMOTIVE 105°C OPERATION BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN
Rev.1.0_00
S-19104/19106 Series
4. 2 S-19104 Series C type
Output form: CMOS output (Active "L")
Table 4
Detection Voltage
1.2 V ± (2.5% + 22 mV)
1.3 V ± (2.5% + 22 mV)
1.4 V ± (2.5% + 22 mV)
1.5 V ± (2.5% + 22 mV)
1.6 V ± (2.5% + 22 mV)
1.7 V ± (2.5% + 22 mV)
1.8 V ± (2.5% + 22 mV)
1.9 V ± (2.5% + 22 mV)
2.0 V ± (2.5% + 22 mV)
2.1 V ± (2.5% + 22 mV)
2.2 V ± 3.5%
2.3 V ± 3.5%
2.4 V ± 3.5%
2.5 V ± 3.5%
2.6 V ± 3.5%
2.7 V ± 3.5%
2.8 V ± 3.5%
2.9 V ± 3.5%
3.0 V ± 3.5%
3.1 V ± 3.5%
3.2 V ± 3.5%
3.3 V ± 3.5%
3.4 V ± 3.5%
3.5 V ± 3.5%
3.6 V ± 3.5%
3.7 V ± 3.5%
3.8 V ± 3.5%
3.9 V ± 3.5%
4.0 V ± 3.5%
4.1 V ± 3.5%
4.2 V ± 3.5%
4.3 V ± 3.5%
4.4 V ± 3.5%
4.5 V ± 3.5%
4.6 V ± 3.5%
4.7 V ± 3.5%
4.8 V ± 3.5%
4.9 V ± 3.5%
5.0 V ± 3.5%
SOT-23-5
S-19104C12H-M5T1U
S-19104C13H-M5T1U
S-19104C14H-M5T1U
S-19104C15H-M5T1U
S-19104C16H-M5T1U
S-19104C17H-M5T1U
S-19104C18H-M5T1U
S-19104C19H-M5T1U
S-19104C20H-M5T1U
S-19104C21H-M5T1U
S-19104C22H-M5T1U
S-19104C23H-M5T1U
S-19104C24H-M5T1U
S-19104C25H-M5T1U
S-19104C26H-M5T1U
S-19104C27H-M5T1U
S-19104C28H-M5T1U
S-19104C29H-M5T1U
S-19104C30H-M5T1U
S-19104C31H-M5T1U
S-19104C32H-M5T1U
S-19104C33H-M5T1U
S-19104C34H-M5T1U
S-19104C35H-M5T1U
S-19104C36H-M5T1U
S-19104C37H-M5T1U
S-19104C38H-M5T1U
S-19104C39H-M5T1U
S-19104C40H-M5T1U
S-19104C41H-M5T1U
S-19104C42H-M5T1U
S-19104C43H-M5T1U
S-19104C44H-M5T1U
S-19104C45H-M5T1U
S-19104C46H-M5T1U
S-19104C47H-M5T1U
S-19104C48H-M5T1U
S-19104C49H-M5T1U
S-19104C50H-M5T1U
Seiko Instruments Inc.
5
5 Page 
FOR AUTOMOTIVE 105°C OPERATION BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN
Rev.1.0_00
S-19104/19106 Series
2. CMOS output product
Table 11
(Ta = −40°C to +105°C unless otherwise specified)
Item Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Circuit
Detection voltage*1 −VDET
−VDET(S)
−VDET(S)
1.2 V ≤ −VDET(S) < 2.2 V × 0.975 −VDET(S) × 1.025
0.95 V ≤ VDD ≤ 10.0 V
− 0.022
+ 0.022
2.2 V ≤ −VDET(S) ≤ 5.0 V
−VDET(S)
× 0.965
−VDET(S)
−VDET(S)
× 1.035
V
V
1
1
Hysteresis width VHYS
−
−VDET −VDET −VDET
× 0.03 × 0.05 × 0.07
V
1
Current
consumption*2
ISS
VDD = 10.0 V, VSENSE = −VDET(S) + 1.0 V
− 0.50 2.10 μA 2
Operation voltage VDD
Output current
IOUT
Detection
delay time*4
tDET
Output transistor
Nch
VDS*3 = 0.5 V
VSENSE = 0.0 V
Output transistor
Pch
VDS*3 = 0.5 V
VSENSE = 10.0 V
VDD = 5.0 V
−
VDD = 0.95 V
VDD = 1.2 V
VDD = 2.4 V
VDD = 4.8 V
VDD = 4.8 V
VDD = 6.0 V
0.95 − 10.0 V
0.50 1.00 − mA
0.73 1.33 − mA
1.17 2.39 − mA
1.49 2.50 − mA
1.62 2.60 − mA
1.78 2.86 − mA
− 40 − μs
1
3
3
3
3
5
5
4
Release
delay time*5
tRESET
VDD = −VDET(S) + 1.0 V, CD = 4.7 nF
8.38 12.69 17.00 ms
4
SENSE pin
resistance
RSENSE
− 4.0 30.0 189.0 MΩ 2
*1. −VDET: Actual detection voltage value, −VDET(S): Set detection voltage value (the center value of the detection voltage
range in Table 4 or Table 6)
*2. The current flowing through the SENSE pin resistance is not included.
*3. VDS: Drain-to-source voltage of the output transistor
*4. The time period from when the pulse voltage of 6.0 V → −VDET(S) − 2.0 V or 0 V is applied to the SENSE pin to when
VOUT reaches VDD / 2.
*5. The time period from when the pulse voltage of 0.95 V → 10.0 V is applied to the SENSE pin to when VOUT reaches
VDD × 90%.
Seiko Instruments Inc.
11
11 Page | ||
| Páginas | Total 39 Páginas | |
| PDF Descargar | [ Datasheet S-19106.PDF ] | |
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