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PDF RFN10NS3S Data sheet ( Hoja de datos )
| Número de pieza | RFN10NS3S | |
| Descripción | Super Fast Recovery Diode | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Super Fast Recovery Diode
RFN10NS3S
lSeries
Standard Fast Recovery
lDimensions (Unit : mm)
lApplications
General rectification
RFN10
NS3S
①
Data Sheet
lLand size figure (Unit : mm)
lFeatures
1)Low switching loss
2)High current overload capacity
3)Cathode common single type
lConstruction
Silicon epitaxial planer
ROHM : LPDS
JEITA : TO263S
① Manufacture Year, Week and Day
lTaping dimensions (Unit : mm)
lStructure
②
①③
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average rectified forward current
VRM
VR
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
(*) 1-3pin common circuit
Tj
Tstg
Conditions
Duty≤0.5
Direct voltage
60Hz half sin wave resistive load Tc=88°C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C (*)
Limits
350
350
10
100
150
-55 to +150
Unit
V
V
A
A
C
C
lElectrical characteristics (Tj=25C)
Parameter
Symbol
Forward voltage
Reverse current
Reverse recovery time (*)
VF
IR
trr
Thermal resistance
Rth(j-c)
(*) Design assurance without measurement.
Conditions
IF=10A
VR=350V
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
Min.
－
－
－
－
Typ. Max.
1.25 1.5
0.05 10
22 30
－ 4.0
Unit
V
μA
ns
°C/W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A
1 page  
Notes
Notice
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More detail product informations and catalogs are available, please contact us.
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
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| PDF Descargar | [ Datasheet RFN10NS3S.PDF ] | |
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