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PDF STU432S Data sheet ( Hoja de datos )
| Número de pieza | STU432S | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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STU/D432S
SamHop Microelectronics Corp.
Nov,19,2007 ver1.4
N-Channel Logic Level Enhancement Mode Field Effect Transistor
4 PRODUCT SUMMARY
VDSS
ID
RDS(ON) ( m W ) Max
40V 50A
9 @ VGS = 10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
D
G
S
STU SERIES
TO-252AA(D-PAK)
GDS
STD SERIES
TO-251(l-PAK)
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousa @Ta
25 C
-Pulsed b
Drain-Source Diode Forward Current a
Avalanche Current c
Avalanche Energy c
Maximum Power Dissipation a
Ta= 25 C
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
Symbol
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, TSTG
Limit
40
20
50
100
20
23
130
50
-55 to 175
Thermal Resistance, Junction-to-Case R JC 3
Thermal Resistance, Junction-to-Ambient
R JA
50
Unit
V
V
A
A
A
A
mJ
W
C
C /W
C /W
1
1 page  
STU/D432S
1800
1500
1200
Ciss
900
600
6 Coss
300
Crss
0
05
10 15
20 25 30
VDS, Drain-to Source Voltage (V)
Figure 9. Capacitance
350
100
60
10
TD(off )
Tr
Tf
TD(on)
1
V DS =15V ,ID=10A
V G S =10V
1 6 10 60 100 300 600
Rg, Gate Resistance (W)
Figure 11.switching characteristics
10
VDS=15V
8 ID=10A
6
4
2
0
0 4 8 12 16 20 24 28 32
Qg, Total Gate Charge (nC)
Figure 10. Gate Charge
600
100
1ms
10
1001m0sms
1s
DC
VGS=10V
1 Single Pulse
Tc=25 C
0.5
0.1
1
10 30 60
VDS, Drain-Source Voltage (V)
Figure 12. Maximum Safe
Operating Area
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet STU432S.PDF ] | |
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