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PDF GT60J322 Data sheet ( Hoja de datos )
| Número de pieza | GT60J322 | |
| Descripción | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GT60J322 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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GT60J322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J322
The 4th Generation
Soft Switching Applications
Unit: mm
• Enhancement-mode
• Low saturation voltage: VCE (sat) = 1.25 V (typ.) (IC = 60 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Screw torque
DC
1 ms
DC
1 ms
Equivalent Circuit
Symbol
VCES
VGES
IC
ICP
IECF
IECPF
PC
Tj
Tstg
Collector
Gate
Emitter
Rating
600
±25
60
120
60
120
200
150
−55~150
0.8
Unit
V
V
A
A
W
°C
°C
Nm
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
1 2002-01-18
1 page  
Reverse bias SOA
300
100
50
30
10
5
3 Tj <= 125°C
VGE = ±15 V
RG = 18 Ω
1
1 3 10 30 100 3000
Collector-emitter voltage VCE (V)
1000
GT60J322
102
Tc = 25°C
101
rth (t) – tw
100
10−1
Diode
IGBT
10−2
10−130−4
10−3
10−2
10−1
100
101
102
Pulse width tw (s)
IF − VF
100
Common collector
VGE = 0
80
60
Tc = 125°C
40
25 −40
20
0
0 0.4 0.8 1.2 1.6 2.0
Forward voltage VF (V)
100
50
30
trr
Irr
Irr trr, − IF
1000
500
300
10 10
Common collector
5
di/dt = −100 A/µs
VGE = 0
50
Tc = 25°C
3 30
0 10 20 30 40 50 60
Forward current IF (A)
3000
1000
500
300
100
50
30
10
0
Cj − VR
f = 1 MHz
Tc = 25°C
3 5 10
30 50 100
Reverse voltage VR (V)
300 500
1000
100
80
60
500
40
Irr, trr – di/dt
Common collector
IF = 60 A
Tc = 25°C
Irr
trr
20
00
0 40 80 120 160 200 240
di/dt (A/µs)
5 2002-01-18
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT60J322.PDF ] | |
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