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PDF K3940 Data sheet ( Hoja de datos )
| Número de pieza | K3940 | |
| Descripción | Field Effect Transistor Silicon N-Channel MOS Type | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K3940 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK3940
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII)
2SK3940
Switching Regulator, DC/DC Converter Applications
Motor Drive Applications
Unit: mm
• Low drain-source ON-resistance: RDS (ON) = 5.6 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 90 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 75 V)
• Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
75
75
±20
70
280
150
444
70
15
175
−55~175
V
V
V
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c) 1.0 °C/W
Rth (ch-a) 50 °C/W
Note 1: Ensure that the channel temperature does not exceed 175°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 135 μH, IAR = 70 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
Note 4: The definition of maximum rating condition for both channel temperature and storage temperature range is
derived from AEC-Q101.
This transistor is an electrostatic-sensitive device. Handle with care.
1 2009-09-29
1 page  
rth − tw
10
2SK3940
1
Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10μ
0.01
Single pulse
100μ
PDM
t
T
Duty = t/T
Rth (ch-c) = 1.0°C/W
1m
10m
100m
1
Pulse width tw (s)
10
Safe operating area
1000
500
300 ID max (pulsed) *
100 μs *
100 ID max (continuous)
1 ms *
30
10 DC operation
Tc = 25°C
5
3
1
*: Single nonrepetitive pulse
0.5 Tc = 25°C
0.3 Curves must be derated
linearly with increase in
temperature.
0.1
0.1
1
VDSS max
10
Drain-source voltage VDS (V)
100
EAS – Tch
600
500
400
300
200
100
0
25 50 75 100 125 150 175 200
Channel temperature (initial) Tch (°C)
15 V
0V
Test circuit
RG = 25 Ω
VDD = 25 V, L = 135 μH
BVDSS
IAR
VDD
VDS
Waveform
ΕAS
=
1
2
⋅
L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2009-09-29
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K3940.PDF ] | |
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