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STP1806
WN-CHANNEL 60V - 0.015 - 50A TO-220
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
STP1806
60 V < 0.018 W
W■ TYPICAL RDS(on) = 0.015
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
ID
50 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STP1806
MARKING
P1806
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM( )
Ptot
Drain-source Voltage (VGS = 0)
WDrain-gate Voltage (RGS = 20 k )
Gate- source Voltage
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
)( Pulse width limited by safe operating area.
November 2004
PACKAGE
TO-220
PACKAGING
TUBE
Value
60
60
± 20
50
35
200
110
0.73
7
350
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD 50A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 25A, VDD = 30V
Rev.0.1
1/9
Normalized Gate Threshold Voltage vs Temperature
STP1806
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
5/9