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PDF TF9N70 Data sheet ( Hoja de datos )

Número de pieza TF9N70
Descripción AOTF9N70
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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No Preview Available ! TF9N70 Hoja de datos, Descripción, Manual

AOT9N70/AOTF9N70
700V, 9A N-Channel MOSFET
General Description
Product Summary
The AOT9N70 & AOTF9N70 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT9N70L & AOTF9N70L
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F
800V@150
9A
< 1.2
D
AOT9N70
DS
G
AOTF9N70
S
GD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT9N70
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
9
5.8
TC=25°C
Power Dissipation B Derate above 25oC
PD
236
1.8
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOT9N70
65
0.5
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.53
AOTF9N70
700
±30
9*
5.8*
33
3.2
77
154
5
50
0.4
-55 to 150
300
AOTF9N70
65
--
2.5
G
S
AOTF9N70L
9*
5.8*
27.8
0.22
AOTF9N70L
65
--
4.5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev 2: Feb 2012
www.aosmd.com
Page 1 of 6

1 page




TF9N70 pdf
AOT9N70/AOTF9N70
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=0.53°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOT9N70 (Note F)
100
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF9N70 (Note F)
100
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=4.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF9N70 L(Note F)
100
Rev 2: Feb 2012
www.aosmd.com
Page 5 of 6

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