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PDF IRF7476PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7476PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95279
IRF7476PbF
HEXFET® Power MOSFET
Applications
l High Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters for
Netcom and Computing Applications.
l Power Management for Netcom,
Computing and Portable Applications.
l Lead-Free
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
VDSS
12V
RDS(on) max
ID
8.0mW@VGS = 4.5V 15A
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
12
±12
15
12
120
2.5
1.6
0. 02
-55 to + 150
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Notes through are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
04/05/06
http://www.Datasheet4U.com
1 page  
IRF7476PbF
15
12
9
6
3
0
25 50 75 100 125 150
T ,TCca,sCe TaesmepTereamturpeerature (°( C° C) )
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
VDS
VGS
RG
RD
D.U.T.
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
10 0.20
0.10
0.05
0.02
1 0.01
0.1
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
0.001
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJA + T A
10 100
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1000
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7476PBF.PDF ] | |
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