DataSheet.es OB2279 Hoja de datos PDF


PDF OB2279 Datasheet ( Hoja de datos )

Número de pieza OB2279
Descripción Current Mode PWM Controller
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OB2279 datasheet

1 Page

OB2279 pdf
OB2279
Current Mode PWM ControllerFreq Shuffling with Latch Shutdown
ELECTRICAL CHARACTERISTICS
(TA = 25OC if not otherwise noted)
Symbol Parameter
Supply Voltage (VDD)
I_VDD_Startup VDD Start up Current
I_VDD_Ops Operation
Current
UVLO(Enter) VDD
Under Voltage
Lockout Enter
UVLO(Exit) VDD
Under Voltage
Lockout Exit
(Startup)
OVP(Latch)
VDD Over Voltage
Latch Trigger
OVP(De-Latch) VDD Latch Release
Voltage Threshold
I(Vdd)_latch
VDD bleeding current
at latch shutdown
when VDD = 9V
TD_OVP
VDD OVP Debounce
time
VDD_Clamp V
DD Zener Clamp
Voltage
T_Softstart
Soft Start Time
Feedback Input Section(FB Pin)
AVCS
PWM Input Gain
VFB_Open V
FB Open Voltage
Test Conditions
VDD =15V, RI=100K
Measure current into
VDD
VDD=16V,
RI=100Kohm, VFB=3V
26.5
RI = 100Kohm
RI = 100 Kohm, I(VDD ) =
5 mA
ΔVFB /ΔVcs
VDD = 16V
IFB_Short
FB pin short circuit
current
VTH_0D
Zero Duty Cycle FB
Threshold Voltage
VTH_BM
Burst Mode FB
Threshold Voltage
VTH_PL
Power Limiting FB
Threshold Voltage
TD_PL Power
limiting
Debounce Time
ZFB_IN Input
Impedance
Current Sense Input(Sense Pin)
T_blanking
Sense Input Leading
Edge Blanking Time
ZSENSE_IN Sense
Input
Impedance
TD_OC Over
Current
Detection and Control
Delay
VTH_OC_0 Current
Limiting
Threshold at No
Compensation
Short FB pin to GND,
measure current
VDD = 16V,
RI=100Kohm
VDD = 16V,
RI=100Kohm
RI = 100Kohm
CL=1nf at GATE,
RI=100Kohm
VDD = 16V, I(VIN) =
0uA, RI=100Kohm
Min Typ Max
3 20
2.3
8.8 9.8 10.8
15.5 16.5 17.5
28 29.5
7.5
45
80
35
3
2.8
6.2
0.75
0.95
1.6
4.4
80
9.0
300
30
70
V
0.85 0.90 0.95
Unit
uA
mA
V
V
V
V
uA
uSec
V
mSec
V/V
mA
V
V
V
mSec
Kohm
nSec
Kohm
nSec
V
©On-Bright Electronics
-5-
Confidential
OB_DOC_DS_79A0

5 Page

OB2279 arduino
OB2279
Current Mode PWM ControllerFreq Shuffling with Latch Shutdown
z RT Pin Used as Latch Shutdown Input
Control
RT pin coul d also be used as a control inp ut to
implement system latch shutdown function.
An exa mple is to i mplement sy stem OVP
protection with a latch shutdown function through a
photo couple r and affiliated circuits. When OVP
detection signal connected to RT is lower than
VTH_OTP for Version T/L device, (or
VTH_OT_Latch for Version V), OB2 279 co ntrols
system into latch shutdown. The recovery of t he
AC/DC system could only start by resetting internal
latch when VDD voltage drops below VDD_De-
latch value. This cou
ld be ach ieved b y
unplugging/re-plugging of AC source in AC start-
up configuration.
z Gate Drive
OB2279 Gate is connected to the
Gate of an
external MOSFET for power swit ch control. T oo
weak the g ate drive str ength results in higher
conduction and switch loss of MOSFET while too
strong gate drive output compromises the EMI.
Good tradeoff is achiev ed through the built-in
totem pole gate drive d esign with r ight output
strength and dead tim e control. The lo w idle loss
and good EMI sy stem d esign is easi er to achieve
with this dedicated control schem e. An internal
16.5V clamp is added for MOSFET gate protection
at higher than expected VDD input.
z Protection Controls
Good system reliability is achieved with OB2279’s
rich protection features including C ycle-by-Cycle
current limiting (OCP), Over Load Protection (OLP)
with auto-recovery (V and T version) or latch
shutdown(L version), over temperature protection
(OTP) with auto-recovery (V version) or latch
shutdown(T and L version), on-chip VDD over
voltage prote ction (OVP) with latch shutdown and
under voltage lockout (UVLO).
VDD O VP protection is a latched shutdown in
OB2279.
The OCP thr eshold value is self adjusted lower at
higher curren t into VIN p in. This OC P threshold
slope adjustment helps to com pensate the increased
output power lim it at higher AC voltage caused by
inherent Over-Current sensing and contr ol delay. A
constant out put p ower lim it is achieved with
recommended OCP compensation scheme.
At output o verload cond ition, FB vo ltage is set
higher. When FB input exceeds
power li mit
threshold value for more than 80mS, control circuit
reacts to turnoff the power MOSFET. This is so
called OLP shutdown. It is either auto-recovery or
latched shutdown depending on version of OB2279.
Similarly, c ontrol circui t shutdowns the power
MOSFET when an Over Temperature condition is
detected. This shutdown is either auto-recovery or
latched depending on version of OB2279 been used.
VDD is su pplied with transformer auxiliar y
winding output. It is clamped when VDD is higher
than 35V. MOSFET is shut down when VDD drops
below UVLO(enter) lim it and device enters power
on start-up sequence therea
fter.
©On-Bright Electronics
- 10 -
Confidential
OB_DOC_DS_79A0

10 Page





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