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PDF M2N60R Data sheet ( Hoja de datos )
| Número de pieza | M2N60R | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | Tianjin | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de M2N60R (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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N-CHANNEL MOSFET
M2N60V/R/S/B/C/F
Џ㽕 খ᭄MAIN C HARACTERISTICS
,954''GJ6V6RQ˄#9JV
9˅
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9
Q&
⫼䗨
z 催乥ᓔ݇⬉⑤
z ⬉ᄤ䬛⌕఼
z UPS ⬉⑤
APPLICATIONS
z High ef ficiency switch
mode power supplies
z Electronic la mp ballast s
based on half bridge
z UPS
ѻક⡍ᗻ
zԢᷙᵕ⬉㥋
z
z
ᓔԢ݇Crs䗳s (ᑺൟᖿؐ
7.6pF)
zѻકܼ䚼㒣䖛䲾ዽ⌟䆩
z催ᡫ dv/dt 㛑
z RoHSѻક
FEATURES
zLow gate charge
z LowCrss (typical 7.6pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
z RoHSproduct
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http://www.Datasheet4U.com
1 page  
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N-CHANNEL MOSFET
⡍ᕕ᳆㒓ELECTRICAL CHARACTERISTICS (curves)
On-Region Characteristics
Transfer Characteristics
VGS
Top 15V
10V
8V
7V
6.5V
6V
5.5V
Bottom 5V
1
150ć
1
25ć
Notes˖
1. 250ȝs pulse test
2. TC=25ć
0.1
1
10
VDS[V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
7.5
7.0
6.5
6.0 VGS=10V
5.5
VGS=20V
5.0
4.5
Note ˖Tj=25ć
4.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
ID[A]
Capacitance Characteristics
Notes˖
1.250ȝs pulse test
2.VDS=40V
0.1
2 4 6 8 10
VGS[V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
25ć
1
150ć
Notes˖
1. 250ȝs pulse test
2. VGS=0V
0.1
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD[V]
Gate Charge Characteristics
12
V =480V
10 DS
V =300V
DS
8 V =120V
DS
6
4
2
0
0 2 4 6 8 10 12 14 16 18
Q Toltal Gate Charge [nC]
g
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5 Page 
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ᔶሎᇌPACKAGE MECHANICAL DATA
TO-263
1 ≳䘧ᔎൟഎᬜᑨԧㅵ
N-CHANNEL MOSFET
ऩԡ Unit˖mm
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11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet M2N60R.PDF ] | |
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