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Número de pieza | 15P12 | |
Descripción | FQP15P12 | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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No Preview Available ! FQP15P12/FQPF15P12
120V P-Channel MOSFET
QFET®
General Description
These P -Channel enhanc ement m ode pow er f ield effect
transistors ar e prod uced using F airchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially t ailored to
minimize on-st ate resist ance, provide superior swit ching
performance, and wit hstand high energy pulse in t he
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• -15A, -120V, RDS(on) = 0.2Ω @VGS = -10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 110 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
S
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
●
●
▶▲
●
!
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP15P12
FQPF15P12
-120
-15 -15 *
-10.6
-10.6 *
-60 -60 *
± 30
1157
-15
10
-5.0
100 41
0.67
0.27
-55 to +175
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP15P12
1.5
40
62.5
FQPF15P12
3.66
--
62.5
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
http://www.Datasheet4U.com
1 page Typical Characteristics (Continued)
100
1 0 -1
1 0 -2
D = 0.5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
sin g le p u lse
※ N otes :
1 . Z θ J C( t ) = 1 .5 ℃ /W M a x .
2 . D u ty F a c to r , D = t /t
12
3 . T JM - T C = P DM * Z θ JC(t )
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
101
Figure 11-1. Transient Thermal Response Curve for FQP15P12
D =0.5
100
0.2
0.1
0.05
1 0 -1
0.02
0.01
s in g le p u ls e
※ N otes :
1 . Z θ JC( t) = 3 .6 6 ℃ /W M a x .
2. D uty Factor, D =t /t
12
3 . T JM - T C = P DM * Z θ JC(t )
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
101
Figure 11-2. Transient Thermal Response Curve for FQPF15P12
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet 15P12.PDF ] |
Número de pieza | Descripción | Fabricantes |
15P12 | FQP15P12 | Fairchild Semiconductor |
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