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PDF FDP3651U Data sheet ( Hoja de datos )
| Número de pieza | FDP3651U | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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October 2013
FDP3651U
N-Channel PowerTrench® MOSFET
100 V, 80 A, 18 mΩ
Features
Applications
• RDS(on) = 15 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A
• High Performance Trench Technology for Extremely
Low RDS(on)
• Low Miller Charge
• UIS Capability (Single Pulse and Repetitive Pulse)
• Consumer Appliances
• Synchronous Rectification
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplie s
• Micro Solar Inverter
D
GDS TO-220
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1)
PD
EAS
TJ, TSTG
TL
Power Dissipation
Single Pulsed Avalanche Energy
Operating and Storage Temperature
Maximum lead temperature soldering purposes,
1/8” from case for 5 seconds
(Note 2)
FDP3651U
100
±20
80
320
255
266
-55 to 175
300
Unit
V
V
A
W
mJ
°C
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance , Junction to Ambient, Max.
Thermal Resistance , Junction to Case, Max.
Package Marking and Ordering Information
Device Marking
FDP3651U
Device
FDP3651U
Reel Size
Tube
62
0.59
°C/W
°C/W
Tape Width
N/A
Quantity
50 units
©2006 Fairchild Semiconductor Corporation
FDP3651U Rev. C1
1
www.fairchildsemi.com
http://www.Datasheet4U.com
1 page  
Typical Characteristics TC = 25°C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
SINGLE PULSE
1E-3
10-5
10-4
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJc x RθJc + Tc
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION(s)
100
Figure 13. Transient Thermal Response Curve
101
©2006 Fairchild Semiconductor Corporation
FDP3651U Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDP3651U.PDF ] | |
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