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PDF NCE7190 Data sheet ( Hoja de datos )
| Número de pieza | NCE7190 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | NCE Power | |
| Logotipo |  |
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http://www.ncepower.com
Pb Free Product
NCE7190
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE719 0 uses adv anced trenc h techno logy and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● V DS = 71V,ID =90A
RDS(ON) < 6.8mΩ @ VGS=10V ( Typ:5.9mΩ)
Schematic diagram
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and High frequency circuits
● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE7190 NCE7
190
TO-220-3L
Reel Size
-
Tape width
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter S
ymbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃) I
D (100℃) 63
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Limit
71
±20
90
320
170
Quantity
-
Unit
V
V
A
A
A
W
Wuxi NCE Power Semiconductor Co., Ltd
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1 page  
http://www.ncepower.com
Pb Free Product
NCE7190
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 Pow er De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NCE7190.PDF ] | |
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