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PDF NCE7190 Data sheet ( Hoja de datos )

Número de pieza NCE7190
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes NCE Power 
Logotipo NCE Power Logotipo



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No Preview Available ! NCE7190 Hoja de datos, Descripción, Manual

http://www.ncepower.com
Pb Free Product
NCE7190
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE719 0 uses adv anced trenc h techno logy and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
V DS = 71V,ID =90A
RDS(ON) < 6.8m@ VGS=10V ( Typ:5.9m)
Schematic diagram
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Application
Power switching application
Hard switched and High frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE7190 NCE7
190
TO-220-3L
Reel Size
-
Tape width
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter S
ymbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100) I
D (100) 63
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Limit
71
±20
90
320
170
Quantity
-
Unit
V
V
A
A
A
W
Wuxi NCE Power Semiconductor Co., Ltd
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NCE7190 pdf
http://www.ncepower.com
Pb Free Product
NCE7190
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature()
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature()
Figure 10 Pow er De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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