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PDF IRL530 Data sheet ( Hoja de datos )
| Número de pieza | IRL530 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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Power MOSFET
IRL530, SiHL530
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
100
VGS = 5.0 V
28
3.8
14
Single
0.16
TO-220AB
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
•R DS(on) Specified at VGS = 4 V and 5 V
• 175 °C Operating Temperature
•F ast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combi nation of fast swi tching,
ruggedized device design, low on -resistance a nd cost
effectiveness.
The TO-220AB package is univers ally preferred for all
commercial-industrial app lications at powe r dissipation
levels to approximately 50 W. The low thermal resistance
and low package c ost of th e TO- 220AB con tribute to its
wide acceptance throughout the industry.
TO-220AB
IRL530PbF
SiHL530-E3
IRL530
SiHL530
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER S
YMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 5.0 V
TC = 25 °C
TC = 100 °C
VDS 100
VGS ±
ID
IDM 60
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt 5.5
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 1.9 mH, Rg = 25 Ω IAS = 15 A (see fig. 12).
c. ISD ≤ 15 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
LIMIT
10
15
11
0.59
290
15
8.8
88
- 55 to + 175
300d
10 lbf
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
· in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91299
S11-0518-Rev. B, 21-Mar-11
www
.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com
1 page  
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRL530, SiHL530
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
5V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+
- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91299
S11-0518-Rev. B, 21-Mar-11
www
.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRL530.PDF ] | |
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