|
|
PDF FQP9N90C Data sheet ( Hoja de datos )
| Número de pieza | FQP9N90C | |
| Descripción | 900V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FQP9N90C (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
FQP9N90C/FQPF9N90C
900V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancem ent m ode power f ield ef fect
transistors ar e prod uced using F airchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially t ailored to
minimize on-st ate resist ance, provide superior swit ching
performance, and wit hstand high energy pulse in t he
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies.
Features
• 8.0 A, 900V, RDS(on) = 1.4 Ω @VGS = 10 V
• Low gate charge ( typical 45nC)
• Low Crss ( typical 14pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
FQP9N90C FQPF9N90C
900
8.0 8.0 *
2.8 2.8 *
32 32 *
± 30
900
8.0
20.5
4.0
205 68
1.64
0.54
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP9N90C
0.61
0.5
62.5
FQPF9N90C
1.85
--
62.5
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, September 2003
http://www.Datasheet4U.com
1 page  
Typical Characteristics (Continued)
100
D =0.5
1 0 -1
0.2
0.1
0 .0 5
0 .0 2
0 .0 1
1 0 -2 s in g le p u ls e
※ N otes :
1.
Zθ
(t)
JC
=
0 .6 1
℃ /W
M ax.
2 . D u ty F a c to r, D = t /t
12
3 . T JM - T C = P DM * Z θ JC (t )
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S qu are W a ve P ulse D uration [sec]
101
Figure 11-1. Transient Thermal Response Curve for FQP9N90C
100 D = 0 .5
0.2
0.1
1 0 -1 0 .0 5
0 .0 2
0 .0 1
※ N otes :
1 . Z θ JC (t) = 1 .8 5 ℃ /W M a x .
2 . D u ty F a c to r, D = t1/t 2
3 . T JM - T C = P DM * Z θ JC (t )
PDM
t1
t2
sing le pu ls e
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S quare W ave P ulse D uration [sec]
1
101
Figure 11-2. Transient Thermal Response Curve for FQPF9N90C
©2003 Fairchild Semiconductor Corporation
Rev. A, September 2003
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FQP9N90C.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FQP9N90C | 900V N-Channel MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |