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PDF IPI60R165CP Data sheet ( Hoja de datos )
| Número de pieza | IPI60R165CP | |
| Descripción | Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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CoolMOS® Power Transistor
Features
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPI60R165CP
650 V
0.165 Ω
39 nC
PG-TO262
CoolMOS CP is designed for:
• Hard switching topologies for Server and Telecom
Type
IPI60R165CP
Package
PG-TO262
Marking
6R165P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
ID
I D,pulse
E AS
T C=25 °C
T C=100 °C
T C=25 °C
I D=7.9 A, V DD=50 V
Avalanche
energy,
repetitive
t
2),3)
AR
E AR
I D=7.9 A, V DD=50 V
Avalanche
current,
repetitive
t
2),3)
AR
I AR
MOSFET dv /dt ruggedness
Gate source voltage
dv /dt
V GS
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Rev. 2.0
page 1
Value
21
13
61
522
0.79
7.9
50
±20
±30
192
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2008-02-18
http://www.Datasheet4U.com
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
40
20 V
10 V
12 V
8V
6V
30
5.5 V
20
5V
10 4.5 V
IPI60R165CP
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
1.2
6.5 V
1
5.5 V
10 V
0.8 6 V
5V
7V
0.6
0.4
0.2
0
0 5 10 15 20 25
V DS [V]
0
0 102 0 304 0 50
I D [A]
7 Drain-source on-state resistance
R DS(on)=f(T j); I D=12 A; V GS=10 V
0.5
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
100
0.4 80 C °25
0.3
98%
0.2
typ
0.1
60
40
20
C °150
Rev. 2.0
0
-60 -20 20
60 100 140 180
T j [°C]
0
02
page 5
46
V GS [V]
8 10
2008-02-18
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IPI60R165CP.PDF ] | |
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