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PDF FGH40N60SMD Data sheet ( Hoja de datos )

Número de pieza FGH40N60SMD
Descripción 40A Field Stop IGBT
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FGH40N60SMD
600 V, 40 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
• High Input Impedance
• Fast Switching: EOFF = 6.5 uJ/A
• Tighten Parameter Distribution
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS
October 2014
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 2nd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
©2010 Fairchild Semiconductor Corporation
FGH40N60SMD Rev. C3
1
C
G
E
Ratings
600
± 20
± 30
80
40
120
40
20
120
349
174
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com

1 page




FGH40N60SMD pdf
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
4000
3000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
2000
Cies
1000
0
0.1
Coes
Cres
1 10
Collector-Emitter Voltage, VCE [V]
30
Figure 8. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
9
VCC = 200V
400V
300V
6
3
0
0 40 80 120
Gate Charge, Qg [nC]
Figure 9. Turn-on Characteristics vs.
Gate Resistance
100
tr
10
1
0
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG []
50
Figure 11. Switching Loss vs.
Gate Resistance
5
Eon
1
Figure 10. Turn-off Characteristics vs.
Gate Resistance
1000
100
td(off)
10
10
tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
10 20 30 40 50
Gate Resistance, RG []
Figure 12. Turn-on Characteristics vs.
Collector Current
1000
Common Emitter
VGE = 15V, RG = 6
TC = 25oC
100 TC = 175oC
tr
0.1
0
Eoff Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG []
50
10 td(on)
1
20 30 40 50 60 70 80
Collector Current, IC [A]
©2010 Fairchild Semiconductor Corporation
FGH40N60SMD Rev. C3
5
www.fairchildsemi.com

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