|
|
PDF FDPF10N50UT Data sheet ( Hoja de datos )
| Número de pieza | FDPF10N50UT | |
| Descripción | N-Channel UniFET Ultra FRFET MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDPF10N50UT (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
FDPF10N50UT
N-Channel UniFETTM Ultra FRFETTM MOSFET
500 V, 8 A, 1.05 Ω
November 2013
Features
•R DS(on) = 850 mΩ (Typ.) @ VGS = 10 V, ID = 4 A
• Low Gate Charge (Typ. 18 nC)
•L ow Crss (Typ. 9 pF)
•F ast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
•R oHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
Description
UniFETTM MOSFET is Fairchild Semicondu ctor’s hig h voltage
MOSFET family based on planar stripe and DMOS techn ology.
This MOSFET is tailored to r educe on-state r esistance, and to
provide be tter switching performance and higher avalanche
energy streng th. UniFET Ultra F RFETTM MOSFET has much
superior body diode reverse recovery performance. Its trr is less
than 50nsec and the r everse dv/dt immunity is 20V/nsec while
normal planar MOSF ETs have over 200 nsec and 4 .5V/nsec
respectively. Ther efore UniFET Ultra FRFET MO SFET can
remove additional component and improve system r eliability in
certain applications thatrequire performance improvement of the
MOSFET’s bo dy diode. Th is dev ice family is suitable for
switching power co nverter applications su ch as power factor
correction (PFC ), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
D
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC0
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(oNte 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDPF10N50UT
500
±30
8*
4.8*
32*
320
8
12.5
20
42
.33
-55 to +150
300
FDPF10N50UT
3.0
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
FDPF10N50UT Rev. C1
1
www.fairchildsemi.com
http://www.Datasheet4U.com
1 page  
IG = const.
Figure 11. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 12. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
VGS
Figure 13. Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FDPF10N50UT Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDPF10N50UT.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDPF10N50UT | N-Channel UniFET Ultra FRFET MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |