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Número de pieza | FDMC6296 | |
Descripción | Single N-Channel Logic-Level Power Trench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDMC6296 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! FDMC6296
November 2010
Single N-Channel Logic-Level Power Trench® MOSFET
30 V, 11.5 A, 10.5 mΩ
Features
General Description
Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 11.5 A
Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 10 A
Low Qg, Qgd and Rg for efficient switching performance
RoHS Compliant
This single N-Channel MOSFET in the thermally efficient
MicroFET Package has been specifically designed to perform
well in Point of Load converters. Providing an optimized balance
between rDS(on) and gate charge this device can be effectively
used as a “high side” control swtich or “low side” synchronous
rectifier.
Application
Point of Load Converters
1/16 Brick Synchronous Rectifier
Top Bottom
Pin 1
S SG
S
MLP 3.3X3.3
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
30
±20
11.5
40
2.1
0.9
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
3
53
°C/W
Device Marking
FDMC6296
Device
FDMC6296
Package
MLP 3.3X3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMC6296 Rev. C2
1
www.fairchildsemi.com
http://www.Datasheet4U.com
1 page Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.005
10-3
10-2
PDM
SINGLE PULSE
RθJA = 125 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-1 1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2010 Fairchild Semiconductor Corporation
FDMC6296 Rev. C2
5
www.fairchildsemi.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDMC6296.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDMC6296 | Single N-Channel Logic-Level Power Trench MOSFET | Fairchild Semiconductor |
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