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PDF FDA16N50-F109 Data sheet ( Hoja de datos )
| Número de pieza | FDA16N50-F109 | |
| Descripción | N-Channel UniFET MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDA16N50_F109
N-Channel UniFETTM MOSFET
500V, 16.5 A, 380 m
Features
• RDS(on) = 380 m (Max.) @ VGS = 10, ID = 8.3 A
• Low Gate Charge (Typ. 32 nC)
• Low rCss (Typ. 20 pF)
• 100% Avalanche Tested
Applications
• PDP VT
• Uninterruptible Power Supply
November 2013
Description
UniFETTM MOSFET is F airchild Semiconductor ’s high volt age
MOSFET family based on planar stripe and D MOS technology.
This MOSFET is tailored to reduce on-st ate resistance, and to
provide be tter switching performance and higher avalanche
energy strengt h. This device fami ly is suit able for switching
power convert er applicatio ns such as power factor corr ection
(PFC), flat p anel display (FPD) T V pow er, ATX and electronic
lamp ballasts.
D
G
DS
TO-3PN
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25C)
- Continuous (TC = 100C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25C)
- Derate above 25C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
FDA16N50_F109
500
16.5
9.9
66
30
780
16.5
20.5
4.5
205
2.1
-55 to +150
300
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDA16N50_F109
0.6
40
©2007 Fairchild Semiconductor Corporation
FDA16N50_F109 Rev. C1
1
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/C
C
C
Unit
C/W
www.fairchildsemi.com
http://www.Datasheet4U.com
1 page  
Figure 12. Gate Charge Test Circuit & Waveform
IG = const.
V10GVS
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
©2007 Fairchild Semiconductor Corporation
FDA16N50_F109 Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDA16N50-F109.PDF ] | |
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