DataSheet.es    


PDF IRFSL4310ZPbF Data sheet ( Hoja de datos )

Número de pieza IRFSL4310ZPbF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



Hay una vista previa y un enlace de descarga de IRFSL4310ZPbF (archivo pdf) en la parte inferior de esta página.


Total 11 Páginas

No Preview Available ! IRFSL4310ZPbF Hoja de datos, Descripción, Manual

Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
D
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
S
D
DS
G
TO-220AB
IRFB4310ZPbF
PD - 97115A
IRFB4310ZPbF
IRFS4310ZPbF
IRFSL4310ZPbF
HEXFET® Power MOSFET
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
100V
4.8m:
6.0m:
127A c
75A
D
D
DS
G
D2Pak
IRFS4310ZPbF
DS
G
TO-262
IRFSL4310ZPbF
GD
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current d
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy e
Avalanche Current c
Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
RθCS
RθJA
RθJA
www.irf.com
Junction-to-Case k
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220 k
Junction-to-Ambient (PCB Mount) , D2Pak jk
Drain
S
Source
Max.
127c
90c
75
560
250
1.7
± 20
18
-55 to + 175
300
10lbxin (1.1Nxm)
130
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
–––
Max.
0.6
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1 http://www.Datasheet4U.com
4/27/07

1 page




IRFSL4310ZPbF pdf
IRFB/S/SL4310ZPbF
1
D = 0.50
0.1 0.20
0.10
0.05
0.02
0.01 0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
τJ
τJ
τ1
τ1
R1R1
CiC=iτi/Ri/iRi
R2R2
τ2
τ2
R3R3
R4R4
τC
Ri (°C/W)
0.018756
τι (sec)
0.000373
τ3
τ 0.159425 0.000734
τ4
τ3 τ4 0.320725 0.005665
0.101282 0.115865
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
0.01
10 0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
1 Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-02
1.0E-01
140
TOP
Single Pulse
120
BOTTOM 1% Duty Cycle
ID = 75A
100
80
60
40
20
0
25
50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceTejmdax (assumed as
25°C in Figure 14).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
www.irf.com
5

5 Page





IRFSL4310ZPbF arduino
IRFB/S/SL4310ZPbF
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/07
11

11 Page







PáginasTotal 11 Páginas
PDF Descargar[ Datasheet IRFSL4310ZPbF.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IRFSL4310ZPbFPower MOSFET ( Transistor )International Rectifier
International Rectifier

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar