|
|
PDF K3366 Data sheet ( Hoja de datos )
| Número de pieza | K3366 | |
| Descripción | MOSFET ( Transistor ) - 2SK3366 | |
| Fabricantes | NEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de K3366 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3366
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3366 is N -Channel M OS Field Effect T ransistor designed for D C/DC converter application of notebook
computers.
FEATURES
• Low on-resistance
RDS(on)1 = 21 mΩ (MAX.) (VGS = 10 V, ID = 10 A)
RDS(on)2 = 33 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A)
RDS(on)3 = 43 mΩ (MAX.) (VGS = 4.0 V, ID = 10 A)
• Low Ciss : Ciss = 730 pF (TYP.)
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3366
TO-251
2SK3366-Z
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC)
Drain Current (Pulse) Note
ID(DC)
ID(pulse)
±20
±80
Total Power Dissipation (TC = 25 °C) PT 30
Total Power Dissipation (TA = 25 °C) PT 1.0
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to + 150
V
V
A
A
W
W
°C
°C
Note PW ≤ 10 µs, Duty cycle ≤ 1 %
THERMAL RESISTANCE
Channel to case
Channel to ambient
Rth(ch-C)
Rth(ch-A)
4.17
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14256EJ1V0DS00 (1st edition)
Date Published August 1999 NS CP(K)
Printed in Japan
©
1999
http://www.Datasheet4U.com
1 page  
2SK3366
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
VGS = 4.0 V
40
4.5 V
30
10 V
20
10
0
− 50
0
ID = 10 A
50 100 150
Tch - Channel Temperature - ˚C
10000
1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
0.01
0.1 1 10
VDS - Drain to Source Voltage - V
100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1 10 100
IF - Diode Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
VGS = 10 V
4.5 V
10
0V
1
0.1
Pulsed
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Source to Drain Voltage - V
10000
1000
100
SWITCHING CHARACTERISTICS
tr
tf
td(on)
td(off)
10
1
0.1
1 10
ID - Drain Current - A
VDD = 15 V
VGS = 10 V
RG = 10 Ω
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
ID = 20 A
14
30 12
VDD = 24 V
20
15 V
6V
VGS
10
8
6
10 4
VDS 2
0
0 5 10 15 20
QG - Gate Charge - nC
Data Sheet D14256EJ1V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3366.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K3362-01 | MOSFET ( Transistor ) - 2SK3362-01 |  Fuji |
| K3362TC360 | Medium Voltage Thyristor |  IXYS |
| K3362TC380 | Medium Voltage Thyristor | IXYS |
| K3362TC400 | Medium Voltage Thyristor | IXYS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |