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PDF TFG1200 Data sheet ( Hoja de datos )

Número de pieza TFG1200
Descripción 200V High Side / Low Side eGaN Gate Driver
Fabricantes Telefunken 
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No Preview Available ! TFG1200 Hoja de datos, Descripción, Manual

ADVANCE INFO
TFG1200
200V High-Side / Low-Side
eGaN Gate Driver
Features
Description
Floating high-side driver in bootstrap operation to 200V
1.2A/5A peak source/sink current
0.4Ω/2Ω pull down/pull up impedance
Internal bootstrap supply voltage clamped to 5.2V
Independent high-side and low-side logic inputs
Proprietary bootstrap capacitor auto-recharge
technology
Fast propagation delays (25ns typical)
Separate source and sink outputs
Applications
The TFG1200 is a high-side/low-side gate driver uniquely
designed to drive enhancement mode Gallium Nitride (eGaN)
FETs. The TFG1200 provides the special requirements of an
eGaN FET driver: supply clamping, low pull-up and pull-down
impedance, and high peak currents all within a single IC. A
higher sink capability maintains the gate drive line at a low level
during the fast dv/dt of the eGaN FET without unintended turn
on of the FET. Fast propagation delays, fast rise times, and a
proprietary bootstrap capacitor auto-recharge allow higher
switching frequencies allowing smaller component footprints;
and with the integrated bootstrap diode the required area
compared to a discrete solution is greatly reduced.
High Speed DC-DC Conversion
Hard Switched and High Frequency Power Supplies
Class D Audio
TDFN-10
Typical Application
Ordering Information
Year Week Lot Lot
PART NUMBER (NOTE1) PACKAGE
MARK
top botm
TFG1200-NBX
TDFN-10
YWLL
TBD
NOTE1 REPLACE X with P for 180 mm Tape & Reel Packing (Qty 3,000)
or Q for 330 mm Tape & Reel Packing (Qty 10,000).
VCC
VCC
HI
HI
VCC UV
Detect
High Voltage Well
VB UV
Detect
5.2 V
Clamp
HV Level
Shift
VB
HOH
HOL
VSW
Up to 200V
to Load
LI
LI
GND
Control
TFG1200
LOH
LOL
www.telefunkensemiconductors.com
April 1210,122012
ADVANCE INFO
1http://www.Datasheet4U.com

1 page




TFG1200 pdf
ADVANCE INFO
TFG1200
AACCEElleeccttrricicalaCl hCahraacrtearcistteicrsistics
200V High-Side / Low-Side
eGaN Gate Driver
All specifications at TJ = 25°C, VCC = VB = 5V, VSW = GND = 0V, and no load on LOL, HOL,
HOH, and HOL unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
tONL LO turn-on propagation LI rising to LOH
25
ns
delay
rising
tOFFL
LO turn-off propagation LI falling to
25 ns
delay
LOL falling
tONH HO turn-on propagation HI rising to
delay
HOH rising
25 ns
tOFFH
HO turn-off propagation HI falling to
delay
HOL falling
25 ns
tDM ON
Delay matching: LO on &
HO off
1.5 ns
tDM OFF
Delay matching: LO off &
HO on
1.5 ns
tHR HO rise time
7.0 ns
tLR LO rise time
7.0 ns
tHF HO fall time
1.5 ns
tLF LO fall time
1.5 ns
tPW Minimum input pulse
width that changes the
10 ns
output
tBS Bootstrap diode reverse IF = 100mA,
40 ns
recovery time
IR = 100mA
April 1210,122012
ADVANCE INFO
5

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