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Número de pieza | IRFH8334PbF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! VDS
VGS max
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
Qg typ.
ID
(@Tc(Bottom) = 25°C)
30
± 20
9.0
13.5
7.1
25i
V
V
mΩ
nC
A
Applications
• Control MOSFET for high frequency buck converters
Features and Benefits
Features
Low Thermal Resistance to PCB (< 4.1°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
IRFH8334PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Enable better thermal dissipation
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
O rderable part number Package Type
IRFH8334T RP BF
IRFH8334 TR2PBF
PQ FN 5m m x 6m m
PQFN 5mm x 6mm
Standard Pack
Form
Q uantity
Tape an d Reel
4000
Tape and Reel
400
Note
EO L notice #259
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Source Bonding
Technology Limited)
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
30
± 20
14
12
44hi
28hi
25i
100
3.2
30
0.026
-55 to + 150
Notes through are on page 9
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
Units
V
A
W
W/°C
°C
January 13, 2014
http://www.Datasheet4U.com
1 page 30
ID = 20A
25
20
15
TJ = 125°C
10
TJ = 25°C
5
0 5 10 15 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
IRFH8334PbF
160
ID
140 TOP 3.7A
8.2A
120 BOTTOM 20A
100
80
60
40
20
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-VDD
Fig 15a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
January 13, 2014
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRFH8334PbF.PDF ] |
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