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PDF IRF2907ZPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF2907ZPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95489D
IRF2907ZPbF
IRF2907ZSPbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
IRF2907ZLPbF
HEXFET® Power MOSFET
D VDSS = 75V
G RDS(on) = 4.5mΩ
Description
S ID = 160A∗
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
TO-220AB
D2Pak
TO-262
IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Wirebond Limited)
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
kJunction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
jJunction-to-Ambient (PCB Mount, steady state)
Max.
170
120
160 *
680
300
2.0
± 20
270
690
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
l0.50
–––
62
40
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
07/22/10
http://www.Datasheet4U.com
1 page  
IRF2907Z/S/LPbF
180
160
140
120
100
80
60
40
20
0
25
Limited By Package
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
2.5
ID = 90A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
1
D = 0.50
0.1
0.01
0.001
0.0001
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
τCτ
Ri (°C/W) τi (sec)
0.279 0.000457
0.221 0.003019
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page 
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IRF2907Z/S/LPbF
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789
ASS EMBLED ON WW 19, 1997
IN T HE AS S EMBLY L INE "C"
INTERNAT IONAL
RECT IFIER
L OGO
AS SEMBLY
LOT CODE
PART NUMBER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
OR
INT ERNAT IONAL
RECT IFIER
L OGO
ASS EMBLY
LOT CODE
PART NUMBER
DAT E CODE
P = DES IGNATES L EAD-FREE
PRODUCT (OPT IONAL)
YEAR 7 = 1997
WEEK 19
A = AS SEMBLY SITE CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website athttp://www.irf.com/package/
www.irf.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRF2907ZPbF.PDF ] | |
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