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PDF K2876-01MR Data sheet ( Hoja de datos )
| Número de pieza | K2876-01MR | |
| Descripción | MOSFET ( Transistor ) - 2SK2876-01MR | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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2SK2876-01MR
FAP-IIS Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Repetitive Avalanche Rated
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
N-channel MOS-FET
500V 1,5Ω ±6A 30W
> Outline Drawing
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Repetitive or Non-Repetitive (Tch ≤ 150°C)
Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
V DS
ID
I D(puls)
V GS
I AR
E AS
PD
T ch
T stg
500
±6
±24
±35
6
196.9
30
150
-55 ~ +150
L=10.0mH,Vcc=50V
> Equivalent Circuit
Unit
V
A
A
V
A
mJ
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
BV DSS
ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=500V
VGS=0V
Tch=25°C
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±35V VDS=0V
Drain Source On-State Resistance
Forward Transconductance
R DS(on)
g fs
ID=3A
ID=3A
VGS=10V
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=300V
t r ID=6A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
Avalanche Capability
t f RGS=10 Ω
I AV L = 10,0mH Tch=25°C
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs Tch=25°C
Min.
500
3,5
2
6
Typ. Max.
4,0
10
0,2
10
1,25
4
540
100
45
13
40
30
25
4,5
500
1,0
100
1,5
810
150
70
20
60
45
40
1,0 1,5
450
3,2
Unit
V
V
µA
mA
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-c)
R th(ch-a)
Test conditions
channel to case
channel to air
Min. Typ. Max. Unit
4,17 °C/W
62,5 °C/W
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